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    产品型号2N5154HR的Datasheet PDF文件预览

    2N5154HR  
    Hi-Rel NPN bipolar transistor 80 V - 5 A  
    Datasheet − production data  
    Features  
    BVCEO  
    80 V  
    5 A  
    1
    3
    2
    IC (max)  
    TO-39  
    HFE at 10 V - 150 mA  
    > 70  
    TO-257  
    Operating temperature range  
    - 65 °C to + 200 °C  
    2
    1
    3
    ■ Hi-Rel NPN bipolar transistor  
    ■ Linear gain characteristics  
    ■ ESCC qualified  
    SMD.5  
    ■ European preferred part list - EPPL  
    Figure 1.  
    Internal schematic diagram  
    ■ Radiation level: lot specific total dose contact  
    marketing for specified level  
    Description  
    The 2N5154HR is a silicon planar epitaxial NPN  
    transistor in TO-39, TO-257 and SMD.5 packages.  
    It is specifically designed for aerospace Hi-Rel  
    applications and ESCC qualified according to the  
    5203-010 specification. In case of conflict  
    between this datasheet and ESCC detailed  
    specification, the latter prevails.  
    Table 1.  
    Device summary  
    Order codes  
    Packages  
    Lead finish  
    Marking  
    Type  
    EPPL  
    Packaging  
    Gold  
    Solder Dip  
    520301001  
    520301002  
    2N5154HR  
    TO-39  
    SMD.5  
    TO-257  
    ESCC Flight  
    ESCC Flight  
    ESCC Flight  
    Strip pack  
    Strip pack  
    Strip pack  
    2N5154SHR  
    Gold  
    520301006  
    Yes  
    Gold  
    Solder Dip  
    520301004  
    520301005  
    2N5154ESYHRB  
    Engineering  
    model  
    2N5154T1  
    2N5154S1  
    2N5154ESY  
    TO-39  
    SMD.5  
    TO-257  
    Gold  
    Gold  
    Gold  
    2N5154T1  
    2N5154S1  
    2N5154ESY  
    Strip pack  
    Strip pack  
    Strip pack  
    Engineering  
    model  
    Engineering  
    model  
    September 2012  
    Doc ID 15387 Rev 4  
    1/10  
    This is information on a product in full production.  
    www.st.com  
    10  
     
    Electrical ratings  
    2N5154HR  
    1
    Electrical ratings  
    Table 2.  
    Symbol  
    Absolute maximum ratings  
    Parameter  
    Value  
    Unit  
    VCBO  
    VCEO  
    VEBO  
    IC  
    Collector-base voltage (IE = 0)  
    Collector-emitter voltage (IB = 0)  
    Emitter-base voltage (IC = 0)  
    Collector current  
    100  
    80  
    6
    V
    V
    V
    A
    5
    Total dissipation at Tamb ≤ 25 °C  
    for 2N5154HR  
    1
    W
    W
    W
    for 2N5154ESYHRB  
    3.3  
    3.3  
    for 2N5154SHR  
    PTOT  
    TC ≤ 25 °C  
    for 2N5154HR  
    for 2N5154ESYHRB  
    for 2N5154SHR  
    8.75  
    35  
    W
    W
    W
    35  
    TSTG  
    TJ  
    Storage temperature  
    - 65 to 200  
    200  
    °C  
    °C  
    Max. operating junction temperature  
    Table 3.  
    Symbol  
    Thermal data for through-hole packages  
    Parameter  
    TO-39  
    TO-257  
    Unit  
    RthJC  
    RthJA  
    Thermal resistance junction-case  
    __  
    max  
    max  
    20  
    5
    °C/W  
    Thermal resistance junction-ambient __  
    175  
    53  
    Table 4.  
    Symbol  
    Thermal data for SMD package  
    Parameter  
    SMD.5  
    Unit  
    RthJC  
    Thermal resistance junction-case  
    __  
    max  
    5
    °C/W  
    2/10  
    Doc ID 15387 Rev 4  
    2N5154HR  
    Electrical characteristics  
    2
    Electrical characteristics  
    Tcase = 25 °C unless otherwise specified.  
    Table 5.  
    Symbol  
    Electrical characteristics  
    Parameter  
    Test conditions  
    Min. Typ. Max. Unit  
    VCB = 60 V  
    VCB = 60 V  
    1
    µA  
    µA  
    Collector cut-off  
    current (IE = 0)  
    ICES  
    IEBO  
    ICEO  
    Tamb = 150 °C  
    10  
    VEB = 5 V  
    VEB = 6 V  
    1
    1
    µA  
    Emitter cut-off current  
    (IC = 0)  
    mA  
    Collector cut-off  
    current (IB = 0)  
    VCE = 40 V  
    IC = 100 mA  
    50  
    µA  
    V
    Collector-emitter  
    breakdown voltage  
    (IB = 0)  
    (1)  
    V(BR)CEO  
    80  
    IC = 5 A  
    IB = 0.5 A  
    1.5  
    V
    V
    Collector-emitter  
    saturation voltage  
    (1)  
    VCE(sat)  
    IC = 2.5 A  
    IB = 250 mA  
    1.45  
    IC = 2.5 A  
    IC = 5 A  
    IB = 0.25 A  
    IB = 0.5 A  
    1.45  
    2.2  
    V
    V
    Base-emitter  
    saturation voltage  
    (1)  
    VBE(sat)  
    IC = 50 mA  
    IC = 2.5 A  
    IC = 5 A  
    VCE = 5 V  
    VCE = 5 V  
    VCE = 5 V  
    VCE = 5 V  
    50  
    70  
    40  
    200  
    (1)  
    hFE  
    DC current gain  
    IC = 2.5 A  
    Tamb = - 55 °C  
    35  
    VCE = 5 V  
    IC = 500 mA  
    VCB = 10 V  
    AC forward current  
    transfer ratio  
    hfe  
    3.5  
    f = 20 MHz  
    IE = 0  
    COBO  
    Output capacitance  
    Turn-on time  
    250  
    0.5  
    pF  
    µs  
    f = 1 MHz  
    VCC = 30 V  
    VBB = 4 V  
    IC = 5 A  
    ton  
    Vin ≅ 51 V  
    I
    B1 = - IB2 = 0.5 A  
    VCC = 30 V  
    VBB = 4 V  
    IC = 5 A  
    toff  
    Turn-off time  
    Vin ≅ 51 V  
    1.3  
    µs  
    IB1 = - IB2 = 0.5 A  
    1. Pulsed duration = 300 µs, duty cycle ≤ 2%  
    Doc ID 15387 Rev 4  
    3/10  
    Electrical characteristics  
    2N5154HR  
    2.1  
    Electrical characteristics (curves)  
    Figure 2.  
    hFE @VCE = 5 V  
    Figure 3.  
    VCEsat @ hFE = 10  
    AM12790v1  
    AM12791v1  
    1E3  
    1
    -55°C  
    25°C  
    125°C  
    0.1  
    100  
    -55°C  
    25°C  
    125°C  
    0.01  
    0.01  
    10  
    0.1  
    1
    10  
    0.01  
    0.1  
    1
    10  
    Ic (A)  
    Ic (A)  
    Figure 4.  
    VBEsat @ hFE = 10  
    Figure 5.  
    VBEON @ VCE = 5 V  
    AM12793v1  
    AM12792v1  
    1.1  
    1.05  
    1
    1.15  
    1.1  
    1.05  
    1
    0.95  
    0.9  
    0.95  
    0.9  
    0.85  
    0.8  
    0.85  
    0.8  
    0.75  
    0.7  
    0.75  
    0.7  
    0.65  
    0.6  
    0.65  
    0.6  
    -55°C  
    25°C  
    -55°C  
    25°C  
    125°C  
    0.55  
    0.5  
    125°C  
    0.55  
    0.5  
    0.45  
    0.1  
    0.01  
    0.1  
    1
    10  
    1
    10  
    Ic (A)  
    Ic (A)  
    2.2  
    Test circuit  
    Figure 6.  
    Resistive load switching test circuit  
    1. Fast electronic switch  
    2. Non-inductive resistor  
    4/10  
    Doc ID 15387 Rev 4  
     
    2N5154HR  
    Package mechanical data  
    3
    Package mechanical data  
    In order to meet environmental requirements, ST offers these devices in different grades of  
    ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®  
    specifications, grade definitions and product status are available at: www.st.com.  
    ECOPACK® is an ST trademark.  
    Doc ID 15387 Rev 4  
    5/10  
    Package mechanical data  
    2N5154HR  
    TO-39 mechanical data  
    mm.  
    Typ.  
    DIM.  
    Min.  
    Max.  
    A
    B
    D
    E
    F
    12.70  
    0.49  
    6.60  
    8.51  
    9.40  
    5.08  
    G
    H
    I
    1.02  
    0.86  
    L
    45°  
    I
    C
    H
    B
    L
    G
    D
    A
    7012939_D  
    6/10  
    Doc ID 15387 Rev 4  
    2N5154HR  
    Package mechanical data  
    TO-257 mechanical data  
    mm.  
    DIM.  
    Min.  
    Typ.  
    Max.  
    5.08  
    1.14  
    A
    A1  
    A2  
    b
    4.83  
    0.89  
    3.05  
    1.02  
    0.89  
    0.64  
    0.64  
    b1  
    D
    0.76  
    16.38  
    16.89  
    10.92  
    0.97  
    D1  
    D2  
    e
    10.41  
    2.54  
    E
    10.41  
    12.70  
    13.39  
    3.56  
    10.67  
    19.05  
    13.64  
    3.81  
    L
    L1  
    P
    0117268D  
    Doc ID 15387 Rev 4  
    7/10  
    Package mechanical data  
    2N5154HR  
    SMD.5 mechanical data  
    mm.  
    Typ.  
    Dim.  
    Min.  
    Max.  
    A
    A1  
    b
    2.84  
    3.00  
    0.38  
    7.26  
    5.72  
    2.41  
    3.05  
    10.16  
    0.76  
    7.52  
    1.91  
    3.15  
    0.25  
    7.13  
    5.58  
    2.28  
    2.92  
    10.03  
    0.51  
    7.39  
    5.84  
    2.54  
    3.18  
    10.28  
    b1  
    b2  
    b3  
    D
    D1  
    E
    7.39  
    7.64  
    e
    7386434B  
    8/10  
    Doc ID 15387 Rev 4  
    2N5154HR  
    Revision history  
    4
    Revision history  
    Table 6.  
    Date  
    Document revision history  
    Revision  
    Changes  
    08-Jan-2009  
    08-Jan-2010  
    1
    2
    Initial release  
    Modified Table 1 on page 1  
    Updated marking for the order code 2N5154ESYHRB in Table 1 on  
    page 1  
    22-Jul-2011  
    12-Sep-2012  
    3
    4
    Added: Section 2.1: Electrical characteristics (curves) on page 4  
    Doc ID 15387 Rev 4  
    9/10  
    2N5154HR  
    Please Read Carefully:  
    Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
    right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
    time, without notice.  
    All ST products are sold pursuant to ST’s terms and conditions of sale.  
    Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
    liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
    No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
    document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
    or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
    third party products or services or any intellectual property contained therein.  
    UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
    WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
    WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
    OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
    UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT  
    RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
    APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
    DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE  
    GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
    Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
    any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
    liability of ST.  
    ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
    Information in this document supersedes and replaces all information previously supplied.  
    The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
    © 2012 STMicroelectronics - All rights reserved  
    STMicroelectronics group of companies  
    Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
    Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
    www.st.com  
    10/10  
    Doc ID 15387 Rev 4  
    配单直通车
    2N5154HR产品参数
    型号:2N5154HR
    生命周期：Obsolete
    Reach Compliance Code：compliant
    ECCN代码：EAR99
    风险等级：5.59
    最大集电极电流 (IC)：5 A
    集电极-发射极最大电压：80 V
    配置：SINGLE
    最小直流电流增益 (hFE)：40
    JEDEC-95代码：TO-39
    JESD-30 代码：O-MBCY-W3
    元件数量：1
    端子数量：3
    最高工作温度：200 °C
    封装主体材料：METAL
    封装形状：ROUND
    封装形式：CYLINDRICAL
    极性/信道类型：NPN
    最大功率耗散 (Abs)：1 W
    参考标准：EUROPEAN SPACE AGENCY
    子类别：Other Transistors
    表面贴装：NO
    端子形式：WIRE
    端子位置：BOTTOM
    晶体管元件材料：SILICON
    最大关闭时间（toff）：1300 ns
    最大开启时间（吨）：500 ns
    Base Number Matches：1
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