2N6609芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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by 2N3773/D

SEMICONDUCTOR TECHNICAL DATA

The 2N3773 and 2N6609 are PowerBase power transistors designed for high

power audio, disk head positioners and other linear applications. These devices can

also be used in power switching circuits such as relay or solenoid drivers, dc to dc

converters or inverters.

*Motorola Preferred Device

16 AMPERE

COMPLEMENTARY

POWER TRANSISTORS

140 VOLTS

•

High Safe Operating Area (100% Tested) 150 W @ 100 V

Completely Characterized for Linear Operation

High DC Current Gain and Low Saturation Voltage

150 WATTS

h

V

= 15 (Min) @ 8 A, 4 V

FE

= 1.4 V (Max) @ I = 8 A, I = 0.8 A

CE(sat)

For Low Distortion Complementary Designs

C B

•

CASE 1–07

TO–204AA

(TO–3)

*MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector Emitter Voltage

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V

CEO

140

160

7

V

CEX

CBO

EBO

V

Collector Current — Continuous

— Peak (1)

I

C

16

30

Base Current — Continuous

— Peak (1)

I

B

4

15

Adc

Total Power Dissipation @ T = 25 C

C

Derate above 25 C

P

D

150

0.855

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200

C

J

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

1.17

C/W

θJC

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

1

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS (1)

Symbol

Min

Max

Unit

*Collector–Emitter Breakdown Voltage

V

140

160

150

—

10

Vdc

CEO(sus)

(I = 0.2 Adc, I = 0)

C

B

*Collector–Emitter Sustaining Voltage

(I = 0.1 Adc, V = 1.5 Vdc, R

V

CEX(sus)

CER(sus)

= 100 Ohms)

C

BE(off) BE

Collector–Emitter Sustaining Voltage

(I = 0.2 Adc, R = 100 Ohms)

V

Vdc

C

BE

*Collector Cutoff Current

(V = 120 Vdc, I = 0)

I

mAdc

CEO

CE

B

*Collector Cutoff Current

I

CEX

(V

CE

(V

CE

= 140 Vdc, V

= 1.5 Vdc)

= 1.5 Vdc, T = 150 C)

—

2

10

BE(off)

C

Collector Cutoff Current

(V = 140 Vdc, I = 0)

I

—

2

5

mAdc

CBO

CB

*Emitter Cutoff Current

(V = 7 Vdc, I = 0)

E

I

—

EBO

BE

C

ON CHARACTERISTICS (1)

DC Current Gain

h

FE

—

*(I = 8 Adc, V

= 4 Vdc)

15

5

60

—

C

CE

(I = 16 Adc, V

CE

C

Collector–Emitter Saturation Voltage

*(I = 8 Adc, I = 800 mAdc)

V

Vdc

CE(sat)

—

1.4

4

C

B

(I = 16 Adc, I = 3.2 Adc)

C

B

*Base–Emitter On Voltage

(I = 8 Adc, V = 4 Vdc)

V

—

2.2

BE(on)

C

CE

DYNAMIC CHARACTERISTICS

Magnitude of Common–Emitter

Small–Signal, Short–Circuit, Forward Current Transfer Ratio

|h

h

|

4

—

fe

(I = 1 A, f = 50 kHz)

C

*Small–Signal Current Gain

40

fe

(I = 1 Adc, V

C CE

= 4 Vdc, f = 1 kHz)

SECOND BREAKDOWN CHARACTERISTICS

Second Breakdown Collector Current with Base Forward Biased

I

1.5

—

Adc

S/b

t = 1 s (non–repetitive), V

CE

= 100 V, See Figure 12

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2%.

* Indicates JEDEC Registered Data.

2

Motorola Bipolar Power Transistor Device Data

NPN

PNP

300

200

300

200

150°C

25°C

100

70

100

70

–55°C

25°C

50

V

= 4 V

30

20

30

20

CE

V

= 4 V

CE

10

7.0

5.0

7.0

5.0

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

20

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

20

5.0

20

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain

Figure 2. DC Current Gain

2.0

1.6

1.2

0.8

0.4

0

2.0

I

= 4 A

I = 4 A

C

1.6

1.2

I

= 16 A

C

I

= 8 A

C

I

= 8 A

C

I

= 16 A

C

0.8

0.4

0

T

= 25°C

T = 25°C

C

0.05

0.07 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

0.05 0.07 0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

I

, BASE CURRENT (AMPS)

I , BASE CURRENT (AMPS)

B

Figure 3. Collector Saturation Region

Figure 4. Collector Saturation Region

2.0

1.6

1.2

0.8

0.4

I

/I = 10

I

/I = 10

C B

1.6

1.2

V

BE(sat)

V

BE(sat)

0.8

0.4

0

25

°

C

25

°C

150°C

150

°

C

150°C

25°C

V

CE(sat)

25°C

V

CE(sat)

5.0 7.0 10

I , COLLECTOR CURRENT (AMPS)

C

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20

0.2 0.3

0.5 0.7 1.0

2.0 3.0

I

, COLLECTOR CURRENT (AMPS)

C

Figure 5. “On” Voltage

Figure 6. “On” Voltage

3

Motorola Bipolar Power Transistor Device Data

30

20

10

40

µs

10

100

200

1.0 ms

µ

s

5.0

3.0

2.0

dc

100 ms

1.0

0.5

500 ms

BONDING WIRE LIMIT

THERMAL LIMIT

0.3

0.2

@ T = 25

SECOND BREAKDOWN LIMIT

°

C, SINGLE PULSE

C

0.1

0.05

0.03

3.0 5.0 7.0

10

20

30

50 70 100

200 300

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

Figure 7. Forward Bias Safe Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate I – V limits of

The data of Figure 7 is based on T

= 200 C; T is

C

J(pk)

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T

J(pk)

C

CE

the transistor that must be observed for reliable operation:

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

< 200 C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

100

80

60

THERMAL

DERATING

40

20

0

40

80

120

160

200

T

, CASE TEMPERATURE (°C)

C

Figure 8. Power Derating

4

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

A

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

C

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

SEATING

PLANE

–T–

E

K

D 2 PL

0.13 (0.005)

INCHES

MIN MAX

1.550 REF

MILLIMETERS

M

T

Q

Y

DIM

A

B

C

D

E

MIN

MAX

39.37 REF

U

–––

0.250

0.038

0.055

1.050

–––

6.35

0.97

1.40

26.67

8.51

1.09

1.77

–Y–

L

V

H

0.335

0.043

0.070

2

1

G

H

K

L

0.430 BSC

0.215 BSC

0.440 0.480

0.665 BSC

10.92 BSC

5.46 BSC

B

G

11.18

12.19

16.89 BSC

N

Q

U

V

–––

0.151

1.187 BSC

0.131

0.830

–––

3.84

30.15 BSC

3.33

21.08

4.19

–Q–

0.165

0.188

M

0.13 (0.005)

T Y

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

5

Motorola Bipolar Power Transistor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

6

Motorola Bipolar Power Transistor Device Data

2N3773/D

◊

型号:	2N6609
是否Rohs认证：	不符合
生命周期：	Transferred
包装说明：	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.69
Is Samacsys：	N
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	16 A
集电极-发射极最大电压：	140 V
配置：	SINGLE
最小直流电流增益 (hFE)：	5
JEDEC-95代码：	TO-204AA
JESD-30 代码：	O-MBFM-P2
JESD-609代码：	e0
元件数量：	1
端子数量：	2
最高工作温度：	200 °C
封装主体材料：	METAL
封装形状：	ROUND
封装形式：	FLANGE MOUNT
极性/信道类型：	PNP
功耗环境最大值：	150 W
认证状态：	Not Qualified
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	PIN/PEG
端子位置：	BOTTOM
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4 MHz
VCEsat-Max：	4 V
Base Number Matches：	1

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