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    • 北京元坤伟业科技有限公司

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    • 30CTH02FPPBF
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    • 北京首天国际有限公司

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    • 30CTH02FPPBF
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    产品型号30CTH02FPPBF的Datasheet PDF文件预览

    Bulletin PD-20894 rev. B 12/06  
    30CTH02PbF  
    30CTH02FPPbF  
    Hyperfast Rectifier  
    Features  
    trr =30ns max.  
    IF(AV) = 30Amp  
    VR = 200V  
    •
    •
    •
    •
    •
    Hyperfast Recovery Time  
    Low Forward Voltage Drop  
    Low Leakage Current  
    175°C Operating Junction Temperature  
    Lead-Free ("PbF" suffix)  
    Description/ Applications  
    International Rectifier's 200V series are the state of the art Hyperfast recovery rectifiers specifically designed with  
    optimized performance of forward voltage drop and hyperfast recovery time.  
    The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness  
    and reliability characteristics.  
    These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as  
    free-wheeling diode in low voltage inverters and chopper motor drives.  
    Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over  
    dissipation in the switching element and snubbers.  
    Absolute Maximum Ratings  
    Parameters  
    Max  
    200  
    15  
    Units  
    VRRM  
    IF(AV)  
    Peak Repetitive Reverse Voltage  
    Average Rectified Forward Current  
    V
    A
    @ TC = 159°C Per Diode  
    @ TC = 125°C (FULLPACK) Per Diode  
    Per Device  
    30  
    200  
    IFSM  
    Non Repetitive Peak Surge Current @ TJ = 25°C  
    TJ, TSTG Operating Junction and Storage Temperatures  
    - 65 to 175  
    °C  
    Case Styles  
    30CTH02FPPbF  
    30CTH02PbF  
    Base  
    Common  
    Cathode  
    2
    2
    Common  
    Cathode  
    2
    3
    1
    1
    Common  
    Cathode  
    3
    Anode  
    Anode  
    Anode  
    Anode  
    TO-220AB  
    TO-220 FULLPACK  
    1
    www.irf.com  
    30CTH02PbF, 30CTH02FPPbF  
    Bulletin PD-20894 rev. B 12/06  
    Electrical Characteristics @ T = 25°C (unless otherwise specified)  
    J
    Parameters  
    Min Typ Max Units Test Conditions  
    VBR, Vr  
    Breakdown Voltage,  
    Blocking Voltage  
    200  
    -
    -
    V
    IR = 100μA  
    VF  
    Forward Voltage  
    -
    -
    -
    -
    -
    -
    0.92 1.05  
    0.78 0.85  
    V
    IF = 15A, TJ = 25°C  
    V
    IF = 15A, TJ = 125°C  
    IR  
    Reverse Leakage Current  
    -
    5
    10  
    μA  
    μA  
    pF  
    nH  
    VR = VR Rated  
    300  
    TJ = 125°C, VR = VR Rated  
    VR = 200V  
    CT  
    LS  
    Junction Capacitance  
    Series Inductance  
    57  
    8
    -
    -
    Measured lead to lead 5mm from package body  
    Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)  
    C
    Parameters  
    Min Typ Max Units Test Conditions  
    trr  
    Reverse Recovery Time  
    -
    -
    -
    -
    -
    -
    35  
    30  
    -
    ns  
    IF = 1A, diF/dt = 50A/μs, VR = 30V  
    IF = 1A, diF/dt = 100A/μs, VR = 30V  
    TJ = 25°C  
    -
    26  
    40  
    2.8  
    IF = 15A  
    -
    TJ = 125°C  
    diF/dt = 200A/μs  
    IRRM  
    Peak Recovery Current  
    -
    A
    TJ = 25°C  
    VR = 160V  
    -
    -
    -
    6.0  
    37  
    -
    -
    -
    TJ = 125°C  
    Qrr  
    Reverse Recovery Charge  
    nC  
    TJ = 25°C  
    120  
    TJ = 125°C  
    Thermal - Mechanical Characteristics  
    Parameters  
    Min  
    Typ  
    Max  
    Units  
    TJ  
    Max. Junction Temperature Range  
    Max. Storage Temperature Range  
    -
    -
    175  
    °C  
    TStg  
    RthJC  
    - 65  
    -
    175  
    c
    Thermal Resistance,  
    Junction to Case  
    Device Marking  
    Per Diode  
    -
    -
    -
    1.1  
    3.5  
    °C/W  
    Fullpack (Per Diode)  
    -
    30CTH02  
    30CTH02FP  
    Case Style TO-220  
    Case Style Fullpack  
    c Mounting Surface, Flat, Smooth and Greased  
    2
    www.irf.com  
    30CTH02PbF, 30CH02FPPbF  
    Bulletin PD-20894 rev. B 12/06  
    100  
    100  
    10  
    1
    Tj = 175˚C  
    150˚C  
    125˚C  
    10  
    1
    100˚C  
    75˚C  
    0.1  
    50˚C  
    25˚C  
    0.01  
    0.001  
    0.0001  
    Tj = 175˚C  
    Tj = 125˚C  
    Tj = 25˚C  
    0
    50  
    100  
    150  
    200  
    Reverse Voltage-VR (V)  
    Fig.2-Typical Values of Reverse Current  
    Vs. Reverse Voltage  
    1000  
    100  
    10  
    T
    = 25˚C  
    J
    0
    50  
    100  
    150  
    200  
    0.4  
    0.6  
    0.8  
    1
    1.2  
    1.4  
    1.6  
    Forward Voltage Drop-VFM (V)  
    Reverse Voltage-VR (V)  
    Fig.3-Typical Junction Capacitance  
    Vs. Reverse Voltage  
    Fig.1-Typical Forward Voltage Drop Characteristics  
    10  
    D = 0.50  
    1
    0.1  
    D = 0.20  
    D = 0.10  
    D = 0.05  
    D = 0.02  
    D = 0.01  
    P
    DM  
    t
    1
    t
    2
    Notes:  
    Single Pulse  
    1. Duty factor D = t1/ t2  
    (Thermal Resistance)  
    2. Peak Tj = Pdm x ZthJC + Tc  
    0.01  
    0.00001  
    0.0001  
    t1,Rectangular Pulse Duration (Seconds)  
    Fig.4-Max. Thermal Impedance ZthJC Characteristics  
    0.001  
    0.01  
    0.1  
    1
    10  
    www.irf.com  
    3
    30CTH02PbF, 30CTH02FPPbF  
    Bulletin PD-20894 rev. B 12/06  
    10  
    D = 0.50  
    D = 0.20  
    1
    D = 0.10  
    D = 0.05  
    D = 0.02  
    D = 0.01  
    P
    DM  
    t
    1
    t
    0.1  
    2
    Notes:  
    1. Duty factor D = t1/ t2  
    2. Peak Tj = Pdm x ZthJC + Tc  
    0.1  
    t1,Rectangular Pulse Duration (Seconds)  
    Single Pulse  
    (Thermal Resistance)  
    0.01  
    0.00001  
    0.0001  
    0.001  
    0.01  
    1
    10  
    Fig.5-Max. Thermal Impedance ZthJC Characteristics(FULLPACK)  
    180  
    170  
    160  
    150  
    140  
    180  
    170  
    160  
    DC  
    150  
    DC  
    140  
    130  
    Square wave (D = 0.50)  
    Rated Vr applied  
    Square wave (D = 0.50)  
    120  
    110  
    100  
    Rated Vr applied  
    see note (2)  
    see note (2)  
    0
    5
    10  
    15  
    20  
    25  
    0
    5
    10  
    15  
    20  
    25  
    AverageForwardCurrent-I F(AV) (A)  
    AverageForwardCurrent-I F(AV) (A)  
    Fig.6-Max. Allowable CaseTemperature  
    Vs. Average Forward Current  
    Fig.7-Max. Allowable CaseTemperature  
    Vs. Average Forward Current(FULLPACK)  
    25  
    20  
    RMS Limit  
    15  
    D = 0.01  
    D = 0.02  
    D = 0.05  
    D = 0.1  
    D = 0.2  
    D = 0.5  
    (2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC  
    ;
    10  
    Pd=ForwardPowerLoss= IF(AV) xVFM @(IF(AV) /D)  
    (seeFig.8);  
    PdREV =InversePowerLoss=VR1 xIR (1-D);  
    5
    0
    DC  
    I
    R @VR1=ratedVR  
    0
    5
    10  
    15  
    20  
    25  
    Average Forward Current-IF(AV) (A)  
    Fig. 8-Forward Power Loss Characteristics  
    4
    www.irf.com  
    30CTH02PbF, 30CH02FPPbF  
    Bulletin PD-20894 rev. B 12/06  
    100  
    1000  
    IF = 15 A  
    IF = 15 A  
    100  
    V R= 160V  
    T J = 125˚C  
    V R = 160V  
    T J = 125˚C  
    T J  
    = 25˚C  
    T J  
    = 25˚C  
    10  
    100  
    10  
    100  
    1000  
    1000  
    di F /dt (A/μs)  
    Fig.9-TypicalReverseRecovery vs.di F /dt  
    diF/dt (A/μs)  
    Fig.10-TypicalStoredCharge vs.diF /dt  
    Reverse Recovery Circuit  
    V
    = 200V  
    R
    0.01  
    Ω
    L = 70µH  
    D.U.T.  
    diF /dt  
    dif/dt  
    ADJUST  
    D
    IRFP250  
    G
    S
    Fig. 11- Reverse Recovery Parameter Test Circuit  
    www.irf.com  
    5
    30CTH02PbF, 30CTH02FPPbF  
    Bulletin PD-20894 rev. B 12/06  
    3
    t
    rr  
    I
    F
    t
    t
    a
    b
    0
    4
    Q
    rr  
    2
    I
    0.5  
    I
    RRM  
    RRM  
    5
    di(rec)M/dt  
    0.75 I  
    RRM  
    1
    di /dt  
    F
    1. di /dt - Rate of change of current through zero  
    F
    crossing  
    4. Qrr - Area under curve defined by t  
    rr  
    and I  
    RRM  
    t
    x I  
    2
    rr  
    RRM  
    Q
    =
    2. I  
    RRM  
    - Peak reverse recovery current  
    rr  
    3. t - Reverse recovery time measured from zero  
    5. di  
    / dt - Peak rate of change of  
    (rec) M  
    current during t portion of t  
    rr  
    rr  
    crossing point of negative going I to point where  
    F
    b
    a line passing through 0.75 I  
    extrapolated to zero current  
    and 0.50 I  
    RRM  
    RRM  
    Fig. 13 - Reverse Recovery Waveform and Definitions  
    Outline Table  
    Conform to JEDEC outline TO-220AB  
    6
    www.irf.com  
    30CTH02PbF, 30CH02FPPbF  
    Bulletin PD-20894 rev. B 12/06  
    Outline Table  
    2
    Common  
    Cathode  
    3
    1
    Anode  
    Anode  
    Conforms to JEDEC Outline TO-220 FULLPACK  
    Dimensions in millimeters and (inches)  
    Part Marking Information  
    PART NUMBER  
    IRXC Assembly Line  
    INTERNATIONAL  
    RECTIFIER  
    LOGO  
    EXAMPLE: THIS IS A 30CTH02  
    LOT CODE 1789  
    DATE CODE  
    P = LEAD-FREE  
    YEAR 1 = 2001  
    WEEK 19  
    ASSEMBLED ON WW 19, 2001  
    IN THE ASSEMBLY LINE "C"  
    ASSEMBLY  
    LOT CODE  
    LINE C  
    PART NUMBER  
    IRMX Assembly Line  
    INTERNATIONAL  
    RECTIFIER  
    LOGO  
    EXAMPLE: THIS IS A 30CTH02  
    LOT CODE 1789  
    DATE CODE  
    YEAR 1 = 2001  
    WEEK 19  
    ASSEMBLED ON WW 19, 2001  
    ASSEMBLY  
    LOT CODE  
    P = LEAD-FREE  
    www.irf.com  
    7
    30CTH02PbF, 30CTH02FPPbF  
    Bulletin PD-20894 rev. B 12/06  
    Marking Information  
    EXAMPLE: THIS IS A 30CTH02FP  
    LOT CODE 1789  
    PART NUMBER  
    INTERNATIONAL  
    RECTIFIER  
    LOGO  
    ASSEMBLED ON WW 19, 2001  
    IN THE ASSEMBLY LINE "C"  
    DATE CODE  
    YEAR 7 = 2001  
    WEEK 19  
    ASSEMBLY  
    LOT CODE  
    LINE C  
    Ordering Information Table  
    Device Code  
    30  
    C
    T
    H
    02 FP PbF  
    6
    7
    1
    2
    3
    4
    5
    1
    2
    3
    4
    5
    6
    -
    Current Rating (30 = 30A)  
    -
    -
    -
    -
    -
    C
    T
    = Common Cathode  
    = TO-220, D2Pak  
    H
    = HyperFast Recovery  
    Voltage Rating (02 = 200V)  
    y none = TO-220AB  
    y FP = TO-220 FULLPACK  
    7
    -
    y none = Standard Production  
    y PbF = Lead-Free  
    Tube Standard Pack Quantity: 50 pieces  
    Data and specifications subject to change without notice.  
    This product has been designed and qualified for AEC Q1O1 Level and Lead-Free.  
    Qualification Standards can be found on IR's Web site.  
    IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
    TAC Fax: (310) 252-7309  
    Visit us at www.irf.com for sales contact information. 12/06  
    8
    www.irf.com  
    配单直通车
    30CTH02FPPBF产品参数
    型号:30CTH02FPPBF
    是否无铅： 不含铅
    是否Rohs认证： 符合
    生命周期：Obsolete
    零件包装代码：TO-220AB
    包装说明：ROHS COMPLIANT, TO-220, FULL PACK-3
    针数：3
    Reach Compliance Code：compliant
    HTS代码：8541.10.00.80
    风险等级：5.63
    其他特性：FREE WHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT
    应用：HYPER FAST RECOVERY
    外壳连接：ISOLATED
    配置：COMMON CATHODE, 2 ELEMENTS
    二极管元件材料：SILICON
    二极管类型：RECTIFIER DIODE
    最大正向电压 (VF)：0.85 V
    JEDEC-95代码：TO-220AB
    JESD-30 代码：R-PSFM-T3
    JESD-609代码：e3
    最大非重复峰值正向电流：200 A
    元件数量：2
    相数：1
    端子数量：3
    最高工作温度：175 °C
    最低工作温度：-65 °C
    最大输出电流：15 A
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    峰值回流温度（摄氏度）：260
    认证状态：Not Qualified
    最大重复峰值反向电压：200 V
    最大反向恢复时间：0.035 µs
    子类别：Rectifier Diodes
    表面贴装：NO
    端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
    端子形式：THROUGH-HOLE
    端子位置：SINGLE
    处于峰值回流温度下的最长时间：40
    Base Number Matches：1
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