4N33SR2M各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号4N33SR2M的概述

芯片4N33SR2M的概述 4N33SR2M是一款具有高隔离性的光耦合器(光隔离器)，广泛应用于各种电子设备中。光耦合器通常用于在电路之间提供电气隔离，实现信号传递，以保护敏感组件和整流电路。此系列光耦合器主要用于数据传送、功率控制和信号线保护等领域，具备良好的温度稳定性和低功耗特性。 4N33SR2M的设计使其在电氣隔离和信号传递之间达到良好的平衡，其内部结构由红外发光二极管（LED）和光电接收器组成。光源发出的光通过一个透明介质照射到接收器，在其电气隔离的情况下完成信号传递。由于其优良的性能，4N33SR2M被广泛应用于工控、消费电子及通信设备中。芯片4N33SR2M的详细参数 4N33SR2M的具体参数如下： 1. 工作电压范围：具有较大的输入电压范围，通常为5V至15V。 2. 工作温度范围：-40℃至+100℃，适应各种恶劣环境。 3. 输入电流：通常要求较低输入电流，约为...

产品型号4N33SR2M的Datasheet PDF文件预览

September 2009

4N29M, 4N30M, 4N32M, 4N33M, H11B1M,TIL113M

General Purpose 6-Pin Photodarlington Optocoupler

Features

Description

■ High sensitivity to low input drive current

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and

TIL113M have a gallium arsenide infrared emitter

optically coupled to a silicon planar photodarlington.

■ Meets or exceeds all JEDEC Registered

Speciﬁcations

■ UL, C-UL approved, File #E90700, Volume 2

■ IEC 60747-5-2 approved (ordering option V)

Applications

■ Low power logic circuits

■ Telecommunications equipment

■ Portable electronics

■ Solid state relays

■ Interfacing coupling systems of different potentials

and impedances

Schematic

ANODE 1

6 BASE

CATHODE

N/C

COLLECTOR

EMITTER

www.fairchildsemi.com

4NXXM, H11B1M, TIL113M Rev. 1.0.3

Absolute Maximum Ratings (T = 25°C unless otherwise speciﬁed.)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute

maximum ratings are stress ratings only.

Symbol

Parameter

Value

Units

TOTAL DEVICE

Storage Temperature

Operating Temperature

-50 to +150

-40 to +100

260 for 10 sec

250

°C

STG

OPR

Lead Solder Temperature (Wave)

°C

SOL

Total Device Power Dissipation @ T = 25°C

mW/°C

Derate above 25°C

3.3

EMITTER

Continuous Forward Current

Reverse Voltage

I (pk)

Forward Current – Peak (300µs, 2% Duty Cycle)

3.0

150

2.0

LED Power Dissipation @ T = 25°C

mW/°C

Derate above 25°C

DETECTOR

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Collector Breakdown Voltage

CEO

CBO

ECO

Detector Power Dissipation @ T = 25°C

150

2.0

150

mW/°C

Derate above 25°C

Continuous Collector Current

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

Electrical Characteristics (T = 25°C Unless otherwise speciﬁed.)

Individual Component Characteristics

Symbol

EMITTER

Parameter

Test Conditions

Device

Min.

Typ. Max. Unit

Input Forward Voltage*

I = 10mA

4NXXM

1.2

1.5

H11B1M,

TIL113M

0.8

Reverse Leakage Current*

Capacitance*

= 3.0V

= 6.0V

4NXXM

0.001

100

µA

H11B1M,

TIL113M

V = 0V, f = 1.0MHz

All

150

DETECTOR

Collector-Emitter Breakdown Voltage* I = 1.0mA, I = 0

4NXXM,

TIL113M

CEO

H11B1M

All

5.0

100

Collector-Base Breakdown Voltage*

= 100µA, I = 0

CBO

ECO

Emitter-Collector Breakdown Voltage* I = 100µA, I = 0

4NXXM

H11B1M,

TIL113M

Collector-Emitter Dark Current*

= 10V, Base Open

All

100

CEO

Transfer Characteristics

Symbol

Parameter

Test Conditions

Device

Min.

Typ.

Max.

Unit

DC CHARACTERISTICS

(1, 2)

Collector Output Current*

I = 10mA, V = 10V,

4N32M,

4N33M

50 (500)

mA (%)

C(CTR)

= 0

4N29M, 10 (100)

4N30M

I = 1mA, V = 5V

H11B1M

5 (500)

I = 10mA, V = 1V

TIL113M 30 (300)

4NXXM

(2)

Saturation Voltage*

I = 8mA, I = 2.0mA

1.0

1.25

1.0

CE(SAT)

TIL113M

I = 1mA, I = 1mA

H11B1M

AC CHARACTERISTICS

Turn-on Time

I = 200mA, I = 50mA,

4NXXM,

TIL113M

5.0

µs

= 10V, R = 100Ω

I = 10mA, V = 10V,

H11B1M

R = 100Ω

Turn-off Time

I = 200mA, I = 50mA,

4N32M,

4N33M,

TIL113M

100

off

= 10V, R = 100Ω

4N29M,

4N30M

I = 10mA, V = 10V,

H11B1M

R = 100Ω

(3, 4)

kHz

Bandwidth

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

Electrical Characteristics (T = 25°C Unless otherwise speciﬁed.) (Continued)

Isolation Characteristics

Symbol

Characteristic

Test Conditions

f = 60Hz, t = 1 sec.

VDC

Device Min. Typ. Max.

Units

(5)

Input-Output Isolation Voltage

All

4N32M*

4N33M*

All

7500

2500

1500

PEAK

ISO

VDC

(5)

Isolation Resistance

= 500VDC

Ω

ISO

I-O

(5)

Isolation Capacitance

= Ø, f = 1MHz

All

0.8

* Indicates JEDEC registered data.

Notes:

1. The current transfer ratio(I /I ) is the ratio of the detector collector current to the LED input current.

C F

2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .

3. I adjusted to I = 2.0mA and I = 0.7mA rms.

4. The frequency at which I is 3dB down from the 1kHz value.

5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.

Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Installation Classiﬁcations per DIN VDE 0110/1.89

Table 1

For Rated Main Voltage < 150Vrms

For Rated Main voltage < 300Vrms

Climatic Classiﬁcation

I-IV

55/100/21

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

CTI

175

Input to Output Test Voltage, Method b,

1594

peak

x 1.875 = V , 100% Production Test

IORM

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a,

1275

peak

x 1.5 = V , Type and Sample Test

IORM

with tm = 60 sec, Partial Discharge < 5pC

Max. Working Insulation Voltage

Highest Allowable Over Voltage

External Creepage

850

6000

IORM

peak

IOTM

peak

Ω

External Clearance

Insulation Thickness

0.5

RIO

Insulation Resistance at Ts, V = 500V

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

Typical Performance Curves

Fig. 2 Normalized CTR vs. Forward Current

Fig. 1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

= 5.0V

= 25°C

Normalized to

= 10 mA

= -55°C

= 25°C

= 100°C

100

- LED FORWARD CURRENT (mA)

I - FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Ambient Temperature

Fig. 4 CTR vs. RBE (Unsaturated)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

= 20 mA

= 5 mA

= 10 mA

= 5 mA

= 10 mA

= 20 mA

V = 5.0 V

Normalized to

= 10 mA

= 25°C

-60

-40

-20

100

1000

- AMBIENT TEMPERATURE (°C)

- BASE RESISTANCE (kΩ)

Fig. 6 Collector-Emitter Saturation Voltage

vs. Collector Current

Fig. 5 CTR vs. RBE (Saturated)

100

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

= 25˚C

V = 0.3 V

= 20 mA

= 10 mA

= 2.5 mA

0.1

0.01

= 5 mA

= 20 mA

= 5 mA

= 10 mA

0.001

0.01

0.1

100

1000

- COLLECTOR CURRENT (mA)

R - BASE RESISTANCE (k Ω)

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

Typical Performance Curves (Continued)

Fig. 7 Switching Speed vs. Load Resistor

Fig. 8 Normalized t vs. R

on BE

1000

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

= 10 mA

CC =

10 V

= 10 V

= 25°C

= 2 mA

= 100 Ω

100

off

0.1

100

1000

10000

100000

R-LOAD RESISTOR (kΩ)

- BASE RESISTANCE (k Ω)

Fig. 10 Dark Current vs. Ambient Temperature

Fig. 9 Normalized t vs. R

off

10000

1000

100

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

= 10 V

= 25°

10 V

= 2 mA

= 100 Ω

CC =

0.1

0.01

0.001

100

1000

10000

100000

R - BASE RESISTANCE (k Ω)

- AMBIENT TEMPERATURE (°C)

TEST CIRCUIT

WAVE FORMS

V_CC= 10V

INPUT PULSE

I_C

I_F

R_L

10%

90%

INPUT

OUTPUT

OUTPUT PULSE

R_BE

t_r

t_f

t_off

t_on

Adjust

Figure 11. Switching Time Test Circuit and Waveforms

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

Package Dimensions

Through Hole

0.4" Lead Spacing

8.13–8.89

6.10–6.60

Pin 1

5.08 (Max.)

3.28–3.53

0.25–0.36

7.62 (Typ.)

5.08 (Max.)

3.28–3.53

0.25–0.36

0.38 (Min.)

2.54–3.81

2.54 (Bsc)

0.38 (Min.)

2.54–3.81

2.54 (Bsc)

0.20–0.30

(0.86)

15° (Typ.)

(0.86)

0.41–0.51

0.76–1.14

0.20–0.30

10.16–10.80

1.02–1.78

0.41–0.51

0.76–1.14

1.02–1.78

Surface Mount

(1.78)

8.13–8.89

(1.52)

(2.54)

(7.49)

6.10–6.60

8.43–9.90

(10.54)

(0.76)

Pin 1

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.20–0.30

0.38 (Min.)

0.16–0.88

(8.13)

2.54 (Bsc)

(0.86)

0.41–0.51

0.76–1.14

1.02–1.78

Note:

All dimensions in mm.

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

Ordering Information

Sufﬁx

Example

Option

No Sufﬁx

4N32M

4N32SM

Standard Through Hole Device (50 units per tube)

Surface Mount Lead Bend

SR2

4N32SR2M

4N32TM

Surface Mount; Tape and Reel (1,000 units per reel)

0.4" Lead Spacing

4N32VM

VDE 0884

4N32TVM

4N32SVM

4N32SR2VM

VDE 0884, 0.4" Lead Spacing

SR2V

VDE 0884, Surface Mount

VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel)

Marking Information

4N29

V X YY Q

Deﬁnitions

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

One digit year code, e.g., ‘7’

Two digit work week ranging from ‘01’ to ‘53’

Assembly package code

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

Tape Dimensions

12.0 ± 0.1

2.0 ± 0.05

4.5 ± 0.20

Ø1.5 MIN

1.75 ± 0.10

4.0 ± 0.1

0.30 ± 0.05

11.5 ± 1.0

24.0 ± 0.3

9.1 ± 0.20

21.0 ± 0.1

Ø1.5 ± 0.1/-0

10.1 ± 0.20

User Direction of Feed

0.1 MAX

Note:

All dimensions are in millimeters.

Reﬂow Soldering Proﬁle

300

280

260

240

220

200

180

160

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

°C

140

120

100

1.822°C/Sec Ramp up rate

33 Sec

120

180

270

360

Time (s)

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

PowerTrench^®

PowerXS™

The Power Franchise^®

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK^®

EfficentMax™

EZSWITCH™*

™*

F-PFS™

FRFET^®

Global Power Resource^SM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Programmable Active Droop™

QFET^®

TinyBoost™

TinyBuck™

QS™

Quiet Series™

RapidConfigure™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyPWM™

™

Saving our world, 1mW/W/kW at a time™

SmartMax™

TinyWire™

TriFault Detect™

TRUECURRENT™*

µSerDes™

SMART START™

SPM^®

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Fairchild^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

UHC^®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

OPTOPLANAR^®

FAST^®

FastvCore™

FETBench™

PDP SPM™

Power-SPM™

Sync-Lock™

FlashWriter^®

FPS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.

Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide

any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Advance Information

Preliminary

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

First Production

Full Production

Not In Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

No Identification Needed

Obsolete

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I40

4NXXM, H11B1M, TIL113M Rev. 1.0.3

www.fairchildsemi.com

4N33SR2M相关文章

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4N33SR2M产品参数

型号:	4N33SR2M
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	DIP
包装说明：	SURFACE MOUNT PACKAGE-6
针数：	6
制造商包装代码：	6LD,MDIP,OPTO,WHITE,SURFACE MOUNT FORM
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.40.80.00
风险等级：	3.45
Is Samacsys：	N
其他特性：	UL APPROVED
Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE
标称电流传输比：	500%
最大暗电源：	100 nA
最大正向电流：	0.08 A
最大绝缘电压：	7500 V
JESD-609代码：	e3
元件数量：	1
最高工作温度：	100 °C
最低工作温度：	-40 °C
光电设备类型：	DARLINGTON OUTPUT OPTOCOUPLER
端子面层：	Matte Tin (Sn)
Base Number Matches：	1

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