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产品型号60EPF10PBF的Datasheet PDF文件预览

VS-60EPF1.PbF, VS-60CPF1.PbF Series  
www.vishay.com  
Vishay Semiconductors  
Fast Soft Recovery Rectifier Diode, 60 A  
FEATURES  
TO-247AC modified  
TO-247AC  
• Designed  
and  
qualified  
according  
to  
JEDEC-JESD47  
• Compliant to RoHS Directive 2002/95/EC  
Base  
common  
cathode  
2, 4  
Base  
common  
cathode  
2
APPLICATIONS  
• Output rectification and freewheeling in inverters,  
choppers and converters  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
3
1
Anode  
1
Anode  
3
Anode  
Cathode  
VS-60EPF..  
VS-60CPF..  
DESCRIPTION  
PRODUCT SUMMARY  
The VS-60EPF..PbF and VS-60CPF..PbF fast soft recovery  
rectifier series has been optimized for combined short  
reverse recovery time and low forward voltage drop.  
Package  
TO-247AC modified (2 pins), TO-247AC  
IF(AV)  
60 A  
1000 V, 1200 V  
1.4 V  
VR  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
VF at IF  
IFSM  
700 A  
trr  
95 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
trr  
CHARACTERISTICS  
VALUES  
UNITS  
1000 to 1200  
V
Sinusoidal waveform  
60  
700  
A
1 A, - 100 A/μs  
30 A, TJ = 25 °C  
Range  
95  
ns  
V
VF  
1.2  
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
V
RSM, MAXIMUM NON-REPETITIVE  
IRRM  
PART NUMBER  
REVERSE VOLTAGE  
V
PEAK REVERSE VOLTAGE  
V
AT 150 °C  
mA  
VS-60EPF10PbF, VS-60CPF10PbF  
VS-60EPF12PbF, VS-60CPF12PbF  
1000  
1200  
1100  
1300  
8
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 103 °C, 180° conduction half sine wave  
VALUES  
60  
UNITS  
Maximum average forward current  
IF(AV)  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
700  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
830  
2450  
3460  
34 600  
Maximum I2t for fusing  
I2t  
A2s  
Maximum I2t for fusing  
I2t  
A2s  
Revision: 18-Aug-11  
Document Number: 94105  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-60EPF1.PbF, VS-60CPF1.PbF Series  
www.vishay.com  
Vishay Semiconductors  
ELECTRICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
60 A, TJ = 25 °C  
VALUES  
1.4  
UNITS  
Maximum forward voltage drop  
Forward slope resistance  
Threshold voltage  
VFM  
rt  
V
m  
V
4.6  
TJ = 125 °C  
VF(TO)  
0.9  
TJ = 25 °C  
0.1  
Maximum reverse leakage current  
IRM  
VR = Rated VRRM  
mA  
TJ = 150 °C  
8
RECOVERY CHARACTERISTICS  
PARAMETER  
SYMBOL TEST CONDITIONS  
VALUES  
480  
8
UNITS  
ns  
IFM  
Reverse recovery time  
Reverse recovery current  
Reverse recovery charge  
Snap factor  
trr  
IF at 60 Apk  
trr  
Irr  
Qrr  
S
A
25 A/μs  
25 °C  
t
dir  
dt  
2.7  
μC  
Qrr  
0.6  
IRM(REC)  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
- 40 to 150  
°C  
Maximum thermal resistance,  
junction to case  
RthJC  
RthJA  
RthCS  
DC operation  
0.4  
40  
Maximum thermal resistance,  
junction to ambient  
°C/W  
Typical thermal resistance,  
case to heatsink  
Mounting surface, smooth and greased  
0.2  
6
g
Approximate weight  
0.21  
oz.  
minimum  
maximum  
6 (5)  
kgf · cm  
(Ibf · in)  
Mounting torque  
Marking device  
12 (10)  
Case style TO-247AC modified  
Case style TO-247AC  
60EPF10, 60EPF12  
60CPF10, 60CPF12  
Revision: 18-Aug-11  
Document Number: 94105  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-60EPF1.PbF, VS-60CPF1.PbF Series  
www.vishay.com  
Vishay Semiconductors  
150  
140  
130  
120  
110  
100  
90  
140  
DC  
60.PF.. Series  
RthJC (DC) = 0.4 °C/W  
180°  
120°  
120  
90°  
60°  
100  
30°  
Ø
80  
Conduction angle  
60  
RMS limit  
Ø
40  
20  
0
Conduction period  
60°  
120°  
60.PF.. Series  
TJ = 150 °C  
30°  
20  
180°  
60  
90°  
50  
0
10  
30  
40  
70  
0
20  
40  
60  
80  
100  
Average Forward Current (A)  
Average Forward Current (A)  
Fig. 1 - Current Rating Characteristics  
Fig. 4 - Forward Power Loss Characteristics  
150  
140  
130  
120  
110  
100  
90  
800  
700  
600  
500  
400  
300  
At any rated load condition and with  
rated VRRM applied following surge.  
60.PF.. Series  
RthJC (DC) = 0.4 °C/W  
Initial TJ = 150 °C  
at 60 Hz 0.0083 s  
at 50 Hz 0.0100 s  
Ø
Conduction period  
DC  
30°  
60.PF.. Series  
60°  
40  
120°  
90°  
180°  
0
20  
60  
80  
100  
1
10  
100  
Number of Equal Amplitude Half Cycle  
Current Pulses (N)  
Average Forward Current (A)  
Fig. 2 - Current Rating Characteristics  
Fig. 5 - Maximum Non-Repetitive Surge Current  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
900  
180°  
120°  
90°  
60°  
30°  
Maximum non-repetitive surge current  
versus pulse train duration.  
800  
700  
600  
500  
400  
300  
Initial TJ = 150 °C  
No voltage reapplied  
Rated VRRM reapplied  
RMS limit  
Ø
Conduction angle  
60.PF.. Series  
60.PF.. Series  
TJ = 150 °C  
0
10  
20  
30  
40  
50  
60  
70  
0.01  
0.1  
1
Average Forward Current (A)  
Fig. 3 - Forward Power Loss Characteristics  
Pulse Train Duration (s)  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Revision: 18-Aug-11  
Document Number: 94105  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-60EPF1.PbF, VS-60CPF1.PbF Series  
www.vishay.com  
Vishay Semiconductors  
1000  
100  
10  
60.PF.. Series  
TJ = 25 °C  
TJ = 150 °C  
1
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Instantaneous Forward Voltage (V)  
Fig. 7 - Forward Voltage Drop Characteristics  
600  
500  
400  
300  
200  
100  
0
12 000  
IFM = 60 A  
60.PF.. Series  
TJ = 25 °C  
60.PF.. Series  
TJ = 25 °C  
10 000  
8000  
6000  
4000  
2000  
0
IFM = 60 A  
IFM = 30 A  
IFM = 30 A  
IFM = 10 A  
IFM = 10 A  
IFM = 5 A  
IFM = 5 A  
IFM = 1 A  
IFM = 1 A  
120  
0
40  
80  
120  
160  
200  
0
40  
80  
160  
200  
dI/dt - Rate of Fall of Forward Current (A/µs)  
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C  
dI/dt - Rate of Fall of Forward Current (A/µs)  
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C  
1200  
25 000  
60.PF.. Series  
TJ = 150 °C  
60.PF.. Series  
TJ = 150 °C  
1000  
800  
600  
400  
200  
0
IFM = 60 A  
20 000  
15 000  
10 000  
5000  
0
IFM = 60 A  
IFM = 30 A  
IFM = 30 A  
IFM = 10 A  
IFM = 5 A  
IFM = 10 A  
IFM = 5 A  
120  
IFM = 1 A  
IFM = 1 A  
160  
0
40  
80  
200  
0
40  
80  
120  
160  
200  
dI/dt - Rate of Fall of Forward Current (A/µs)  
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C  
dI/dt - Rate of Fall of Forward Current (A/µs)  
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C  
Revision: 18-Aug-11  
Document Number: 94105  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-60EPF1.PbF, VS-60CPF1.PbF Series  
www.vishay.com  
Vishay Semiconductors  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
IFM = 60 A  
60.PF.. Series  
TJ = 25 °C  
60.PF.. Series  
IFM = 60 A  
TJ  
= 150 °C  
50  
40  
30  
20  
10  
0
IFM = 30 A  
IFM = 10 A  
IFM = 30 A  
IFM = 10 A  
IFM = 5 A  
IFM = 1 A  
IFM = 5 A  
IFM = 1 A  
160  
0
0
40  
80  
120  
200  
0
40  
80  
120  
160  
200  
dI/dt - Rate of Fall of Forward Current (A/µs)  
dI/dt - Rate of Fall of Forward Current (A/µs)  
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C  
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C  
1
Steady state value  
(DC operation)  
0.1  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.17  
D = 0.08  
0.01  
Single pulse  
60.PF.. Series  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Square Wave Pulse Duration (s)  
Fig. 14 - Thermal Impedance ZthJC Characteristics  
Revision: 18-Aug-11  
Document Number: 94105  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-60EPF1.PbF, VS-60CPF1.PbF Series  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS- 60  
E
P
F
12 PbF  
1
2
3
4
5
6
7
1
2
3
-
-
-
Vishay Semiconductors product  
Current rating (60 = 60 A)  
Circuit configuration:  
E = Single diode, 2 pins  
C = Single diode, 3 pins  
Package:  
4
5
-
-
P = TO-247AC/AC modified  
Type of silicon:  
F = Fast recovery  
10 = 1000 V  
12 = 1200 V  
6
7
-
-
Voltage code x 100 = VRRM  
PbF = Lead (Pb)-free  
LINKS TO RELATED DOCUMENTS  
TO-247AC modified  
TO-247AC  
www.vishay.com/doc?95253  
www.vishay.com/doc?95223  
www.vishay.com/doc?95255  
www.vishay.com/doc?95226  
Dimensions  
TO-247AC modified  
TO-247AC  
Part marking information  
Revision: 18-Aug-11  
Document Number: 94105  
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
www.vishay.com  
DIMENSIONS in millimeters and inches  
A
A
(3)  
(6)  
E
Ø P  
(Datum B)  
FP1  
B
A2  
A
N
S
M
M
Ø K D B  
(2) R/2  
D2  
Q
2 x R  
(2)  
D1 (4)  
D
L
4
D
1
2
3
Thermal pad  
(5) L1  
C
(4)  
E1  
A
See view B  
M
M
0.01 D B  
2 x b2  
3 x b  
View A - A  
C
2 x e  
A1  
b4  
M
M
0.10 C A  
Lead assignments  
(b1, b3, b5)  
Planting  
Base metal  
Diodes  
D D E  
E
1. - Anode/open  
2. - Cathode  
3. - Anode  
(c)  
c1  
C
C
(b, b2, b4)  
(4)  
Section C - C, D - D, E - E  
View B  
MILLIMETERS  
INCHES  
MIN.  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.65  
2.21  
1.50  
0.99  
0.99  
1.65  
1.65  
2.59  
2.59  
0.38  
0.38  
19.71  
13.08  
MAX.  
5.31  
2.59  
2.49  
1.40  
1.35  
2.39  
2.37  
3.43  
3.38  
0.86  
0.76  
20.70  
-
MAX.  
0.209  
0.102  
0.098  
0.055  
0.053  
0.094  
0.094  
0.135  
0.133  
0.034  
0.030  
0.815  
-
MIN.  
0.51  
MAX.  
1.30  
15.87  
-
MIN.  
MAX.  
0.051  
0.625  
-
A
A1  
A2  
b
0.183  
0.087  
0.059  
0.039  
0.039  
0.065  
0.065  
0.102  
0.102  
0.015  
0.015  
0.776  
0.515  
D2  
E
0.020  
0.602  
0.540  
15.29  
13.72  
3
E1  
e
5.46 BSC  
2.54  
0.215 BSC  
0.010  
0.559  
b1  
b2  
b3  
b4  
b5  
c
FK  
L
14.20  
3.71  
16.10  
4.29  
0.634  
0.169  
L1  
N
0.146  
7.62 BSC  
0.3  
P  
P1  
Q
3.56  
3.66  
6.98  
5.69  
5.49  
0.14  
-
0.144  
0.275  
0.224  
0.216  
-
c1  
D
5.31  
4.52  
0.209  
1.78  
3
4
R
D1  
S
5.51 BSC  
0.217 BSC  
Notes  
(1)  
(2)  
(3)  
Dimensioning and tolerancing per ASME Y14.5M-1994  
Contour of slot optional  
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at  
the outermost extremes of the plastic body  
(4)  
(5)  
(6)  
(7)  
Thermal pad contour optional with dimensions D1 and E1  
Lead finish uncontrolled in L1  
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")  
Outline conforms to JEDEC outline TO-247 with exception of dimension c  
Revision: 16-Jun-11  
Document Number: 95223  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
www.vishay.com  
DIMENSIONS in millimeters and inches  
A
A
(3)  
(6)  
E
ΦP  
(Datum B)  
B
A2  
A
N
S
M
M
Ø K D B  
ΦP1  
(2) R/2  
D2  
Q
2 x R  
(2)  
D1 (4)  
D
L
4
D
1
2
3
Thermal pad  
(5) L1  
C
(4)  
E1  
A
See view B  
2 x b2  
3 x b  
View A - A  
C
2 x e  
A1  
b4  
M
M
0.10 C A  
Lead assignments  
(b1, b3, b5)  
Planting  
Base metal  
Diodes  
D D E  
E
1. - Anode/open  
2. - Cathode  
3. - Anode  
(c)  
c1  
C
C
(b, b2, b4)  
(4)  
Section C - C, D - D, E - E  
View B  
MILLIMETERS  
INCHES  
MIN.  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.65  
2.21  
1.50  
0.99  
0.99  
1.65  
1.65  
2.59  
2.59  
0.38  
0.38  
19.71  
13.08  
MAX.  
5.31  
2.59  
2.49  
1.40  
1.35  
2.39  
2.37  
3.43  
3.38  
0.86  
0.76  
20.70  
-
MAX.  
0.209  
0.102  
0.098  
0.055  
0.053  
0.094  
0.094  
0.135  
0.133  
0.034  
0.030  
0.815  
-
MIN.  
0.51  
MAX.  
1.30  
15.87  
-
MIN.  
0.020  
0.602  
0.540  
MAX.  
0.051  
0.625  
-
A
A1  
A2  
b
0.183  
0.087  
0.059  
0.039  
0.039  
0.065  
0.065  
0.102  
0.102  
0.015  
0.015  
0.776  
0.515  
D2  
E
15.29  
13.72  
3
E1  
e
5.46 BSC  
2.54  
0.215 BSC  
0.010  
0.634  
b1  
b2  
b3  
b4  
b5  
c
K  
L
14.20  
3.71  
16.10  
4.29  
0.559  
0.146  
L1  
N
0.169  
7.62 BSC  
0.3  
P  
P1  
Q
3.56  
3.66  
6.98  
5.69  
5.49  
0.14  
-
0.144  
0.275  
0.224  
0.216  
-
c1  
D
5.31  
4.52  
0.209  
1.78  
3
4
R
D1  
S
5.51 BSC  
0.217 BSC  
Notes  
(1)  
(2)  
(3)  
Dimensioning and tolerance per ASME Y14.5M-1994  
Contour of slot optional  
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at  
the outermost extremes of the plastic body  
(4)  
(5)  
(6)  
(7)  
Thermal pad contour optional with dimensions D1 and E1  
Lead finish uncontrolled in L1  
P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")  
Outline conforms to JEDEC outline TO-247 with exception of dimension c  
Revision: 21-Jun-11  
Document Number: 95253  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
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Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1
配单直通车
60EPF10PBF产品参数
型号:60EPF10PBF
是否Rohs认证: 符合
生命周期:Transferred
IHS 制造商:INTERNATIONAL RECTIFIER CORP
零件包装代码:TO-247AC
包装说明:R-PSFM-T2
针数:3
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.10.00.80
风险等级:5.58
Is Samacsys:N
其他特性:FREE WHEELING DIODE
应用:FAST SOFT RECOVERY
外壳连接:CATHODE
配置:SINGLE
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.4 V
JEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T2
JESD-609代码:e3
最大非重复峰值正向电流:830 A
元件数量:1
相数:1
端子数量:2
最高工作温度:150 °C
最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):250
认证状态:Not Qualified
最大重复峰值反向电压:1000 V
最大反向恢复时间:0.48 µs
子类别:Rectifier Diodes
表面贴装:NO
端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:30
Base Number Matches:1
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