8ETX06-1各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

Bulletin PD-20766 rev. B 02/04

8ETX06

8ETX06S

8ETX06-1

8ETX06FP

Hyperfast Rectifier

Features

t_rr= 15ns typ.

I_F(AV)= 8Amp

V_R= 600V

•

Hyperfast Recovery Time

Low Forward Voltage Drop

Low Leakage Current

175°C Operating Junction Temperature

UL E78996 approved

Description/ Applications

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast

recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling

diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

Absolute Maximum Ratings

Parameters

Max

600

8

Units

V_RRM

I_F(AV)

Peak Repetitive Reverse Voltage

V

Average Rectified Forward Current @ T_C= 143°C

A

@T_C=106°C(FULLPACK)

I_FSM

I_FM

Non Repetitive Peak Surge Current @ T_J= 25°C

110

18

Peak Repetitive Forward Current

T_J, T_STGOperating Junction and Storage Temperatures

- 65 to 175

°C

Case Styles

8ETX06FP

8ETX06

8ETX06S

8ETX06-1

Base

Cathode

2

Base

Cathode

2

1

3

Cathode

Anode

1

3

1

3

N/C

Anode

N/C

Cathode

Anode

TO-220AC

www.irf.com

D²PAK

TO-262

TO-220 FULLPACK

1

8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP

Bulletin PD-20766 rev. B 02/04

Electrical Characteristics @ T = 25°C (unless otherwise specified)

J

Units

Parameters

Min Typ Max

Test Conditions

V_BR, V_r

V_F

Breakdown Voltage,

Blocking Voltage

600

-

V

I_R= 100µA

Forward Voltage

-

2.3 3.0

1.4 1.7

0.3 50

35 500

V

I_F= 8A, T_J= 25°C

V

I_F= 8A, T_J= 150°C

I_R

Reverse Leakage Current

µA

pF

nH

V_R= V_RRated

T_J= 150°C, V_R= V_RRated

V_R= 600V

C_T

L_S

Junction Capacitance

Series Inductance

17

-

8.0

Measured lead to lead 5mm from package body

Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)

C

Parameters

Min Typ Max Units Test Conditions

t_rr

Reverse Recovery Time

-

15

16

17

40

2.3

19

24

-

ns

I_F= 1A, di_F/dt = 100A/µs, V_R= 30V

I_F= 8A, di_F/dt = 100A/µs, V_R= 30V

T_J= 25°C

-

T_J= 125°C

I_F= 8A

I_RRM

Peak Recovery Current

-

A

T_J= 25°C

di_F/dt = 200A/µs

V_R= 390V

-

4.5

20

-

T_J= 125°C

T_J= 25°C

T_J= 125°C

Q_rr

Reverse Recovery Charge

nC

100

31

t_rr

Reverse Recovery Time

Peak Recovery Current

Reverse Recovery Charge

ns

A

I_F= 8A

di_F/dt = 600A/µs

V_R= 390V

I_RRM

Q_rr

-

12

-

T_J= 125°C

195

nC

Thermal - Mechanical Characteristics

Parameters

Min

-

Typ

-

Max

175

2

Units

°C

T_J

Max. Junction Temperature Range

Max. Storage Temperature Range

Thermal Resistance, Junction to Case

T_Stg

R_thJC

- 65

-

Per Leg

-

1.4

3.4

-

°C/W

(Fullpack) Per Leg

-

4.3

70

-

ꢀ

R_thJA

Thermal Resistance, Junction to Ambient

PerLeg

R_{thCS ꢁ}Thermal Resistance, Case to Heatsink

Weight

-

0.5

2.0

0.07

-

g

-

(oz)

MountingTorque

6.0

5.0

12

10

Kg-cm

lbf.in

-

ꢀ

ꢁ

Typical Socket Mount

Mounting Surface, Flat, Smooth and Greased

2

www.irf.com

8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP

Bulletin PD-20766 rev. B 02/04

100

10

1

1000

T

= 175˚C

J

100

10

150˚C

125˚C

100˚C

1

0.1

0.01

0.001

0

25˚C

T

= 175˚C

= 150˚C

J

0

100 200 300 400 500 600

Reverse Voltage-V_R(V)

Fig.2-Typical Values Of Reverse Current

=

25˚C

Vs. Reverse Voltage

1000

100

10

T

= 25˚C

J

0.1

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

0

100 200 300 400 500 600

Reverse Voltage-V_R(V)

Forward Voltage Drop-V_FM(V)

Fig.3-Typical Junction Capacitance

Fig.1-Typical Forward Voltage Drop Characteristics

Vs. Reverse Voltage

10

D = 0.50

D = 0.20

1

P

D = 0.10

D = 0.05

D = 0.02

DM

t

1

D = 0.01

t

2

0.1

Notes:

Single Pulse

(Thermal Resistance)

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

0.01

0.00001

0.0001

t₁,Rectangular Pulse Duration (Seconds)

Fig.4-Max. Thermal Impedance Z_thJCCharacteristics

0.001

0.01

0.1

1

www.irf.com

3

8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP

Bulletin PD-20766 rev. B 02/04

10

D = 0.50

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01

1

0.1

P

DM

t

1

t

2

Single Pulse

(Thermal Resistance)

Notes:

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

0.01

0.00001

0.0001

0.001

0.01

0.1

1

10

100

t₁,Rectangular Pulse Duration (Seconds)

Fig.5-Max. Thermal Impedance Z_thJCCharacteristics(FULLPACK)

180

170

160

150

140

130

120

180

160

140

DC

120

100

Square wave (D = 0.50)

Rated Vr applied

Square wave (D = 0.50)

Rated Vr applied

80

60

40

see note (3)

0

2

4

6

8

10

12

0

2

4

6

8

10

12

Average Forward Current - IF_(AV)(A)

Fig.6-Max. Allowable CaseTemperature

Vs. Average Forward Current

Fig.7-Max. Allowable CaseTemperature

Vs. Average Forward Current(FULLPACK)

20

18

16

14

12

10

8

RMS Limit

(3) Formulaused:T_C=T_J-(Pd+Pd_REV)xR_thJC

;

D = 0.01

D = 0.02

D = 0.05

D = 0.1

D = 0.2

D = 0.5

Pd=ForwardPowerLoss=

6

I_F(AV)xV_FM@(I_F(AV)/D)

(seeFig. 8);

Pd_REV=InversePowerLoss=V_R1xI_R(1-D);

I_R@V_R1=ratedV_R

4

DC

2

0

2

4

6

8

10 12 14

Average Forward Current-IF_(AV)(A)

Fig.8-Forward Power Loss Characteristics

4

www.irf.com

8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP

Bulletin PD-20766 rev. B 02/04

50

40

30

20

10

300

V _R= 390V

T _J= 125˚C

T _J

= 25˚C

250

200

150

100

50

IF = 16 A

IF = 8 A

IF = 16 A

IF = 8 A

V _R= 390V

T _J= 125˚C

IF = 8 A

T _J

= 25˚C

0

100

1000

di _F/dt (A/µs)

Fig.9-TypicalReverseRecovery vs.di _F/dt

di_F/dt (A/µs)

Fig.10-TypicalStoredCharge vs.di_F/dt

Reverse Recovery Circuit

V

= 200V

R

0.01

Ω

L = 70µH

D.U.T.

di_F/dt

D

dif/dt

ADJUST

IRFP250

G

S

Fig. 11- Reverse Recovery Parameter Test Circuit

www.irf.com

5

8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP

Bulletin PD-20766 rev. B 02/04

3

t

rr

I

F

t

a

b

0

4

Q

rr

2

I

0.5

di(rec)M/dt

I

RRM

5

0.75 I

RRM

1

di /dt

di_F/dt

f

1. di /dt - Rate of change of current through zero

F

4. Q_rr- Area under curve defined by t

rr

crossing

and I

RRM

t

x I

2

rr

RRM

Q

=

2. I

- Peak reverse recovery current

RRM

rr

3. t - Reverse recovery time measured from zero

5. di

/ dt - Peak rate of change of

(rec) M

current during t portion of t

rr

crossing point of negative going I to point where

F

RRM

b

a line passing through 0.75 I

extrapolated to zero current

and 0.50 I

RRM

Fig. 12 - Reverse Recovery Waveform and Definitions

Outline Table

10.54 (0.41)

MAX.

1.32 (0.05)

1.22 (0.05)

3.78 (0.15)

3.54 (0.14)

Base

Cathode

2

DIA.

6.48 (0.25)

6.23 (0.24)

2.92 (0.11)

2.54 (0.10)

TERM 2

15.24 (0.60)

14.84 (0.58)

2°

1

3

1

3

Cathode

14.09 (0.55)

13.47 (0.53)

Anode

3.96 (0.16)

3.55 (0.14)

0.10 (0.004)

2.04 (0.080) MAX.

1.40 (0.05)

1.15 (0.04)

2.89 (0.11)

2.64 (0.10)

0.94 (0.04)

0.69 (0.03)

1

3

0.61 (0.02) MAX.

4.57 (0.18)

4.32 (0.17)

Conforms to JEDEC Outline TO-220AC

Dimensions in millimeters and (inches)

5.08 (0.20) REF.

6

www.irf.com

8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP

Bulletin PD-20766 rev. B 02/04

Outline Table

4.69 (0.18)

4.20 (0.16)

10.16 (0.40)

REF.

1.32 (0.05)

1.22 (0.05)

6.47 (0.25)

6.18 (0.24)

93°

15.49 (0.61)

14.73 (0.58)

Base

Cathode

5.28 (0.21)

2.61 (0.10)

2.32 (0.09)

8.89 (0.35)

REF.

4.78 (0.19)

2

0.55 (0.02)

0.46 (0.02)

1.40 (0.055)

1.14 (0.045)

3X

0.93 (0.37)

0.69 (0.27)

MINIMUM RECOMMENDED FOOTPRINT

11.43 (0.45)

2X

1

3

N/C

Anode

1

3

4.57 (0.18)

8.89 (0.35)

4.32 (0.17)

17.78 (0.70)

2

0.61 (0.02) MAX.

5.08 (0.20) REF.

3.81 (0.15)

Conforms to JEDEC Outline D²PAK

2.08 (0.08)

2X

Dimensions in millimeters and (inches)

2.54 (0.10)

2X

2

1

3

Anode

N/C

NC

Modified JEDEC outline TO-262

Dimensions in millimeters and (inches)

www.irf.com

7

8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP

Bulletin PD-20766 rev. B 02/04

Outline Table

10.6

HOLE ø 3.4

10.4

3.1

2.8

2.6

1

3

Cathode

Anode

10°

0.9

0.48

2.54

TYP.

1.15

1.05

0.7

0.44

2.85

2.65

TYP

1.4

1.3

2.54 TYP.

R0.7 (2 PLACES)

R0.5

Conforms to JEDEC Outline TO-220 FULLPACK

Dimensions in millimeters and (inches)

5°± 0.5°

Ordering Information Table

Device Code

8

E

T

X

06 - 1

1

3

5

2

4

6

1

2

3

4

5

6

-

Current Rating (8 = 8A)

E

T

X

= Single Diode

= TO-220, D²Pak

= HyperFast Recovery

Voltage Rating (06 = 600V)

"-1" = TO-262 Option

S

= D²Pak

None = TO-220AC

FP = TO-220 FULLPACK

8

www.irf.com

8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP

Bulletin PD-20766 rev. B 02/04

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 02/04

www.irf.com

9

型号:	8ETX06-1
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	VISHAY INTERTECHNOLOGY INC
零件包装代码：	TO-262AA
包装说明：	R-PSIP-T3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.7
Is Samacsys：	N
其他特性：	FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
应用：	HYPERFAST RECOVERY POWER RECTIFIER
外壳连接：	CATHODE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.7 V
JEDEC-95代码：	TO-262AA
JESD-30 代码：	R-PSIP-T3
最大非重复峰值正向电流：	110 A
元件数量：	1
相数：	1
端子数量：	3
最高工作温度：	175 °C
最大输出电流：	8 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大重复峰值反向电压：	600 V
最大反向恢复时间：	0.024 µs
子类别：	Rectifier Diodes
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

电子百科

产品导航

产品型号8ETX06-1的Datasheet PDF文件预览

8ETX06-1相关产品

8ETX06-1相关文章

IC37:专业IC行业平台