6
HBFP-0420 Die Model and PSPICE Parameters
C
XX
CMP10
DIODEMODELFORM
# DIODE MODEL #
MODEL = DBC
CMP9
R
CMP5
C
C = 19E-3 pF
CMP2
DIODE
AREA=
REGION=
MODEL = DBC
TEMP=
CMP1
NPNBJTSUBST
R =12 OH
IS=I.40507E-17
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
AREA=
REGION=
MODEL=DCS
TEMP=
CMP12
DIODEMODELFORM
RS=
CJO=2.393E-14
TT=
EG=
VJ=0.729
M=0.44
N=1
FC=0.8
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
CMP3
DIODE
CMP7
R
B
XX
R=7.78 OH
C =7E-3 pF
CMP6
C
CMP16
DIODE
TEMP=
MODEL=DBE
REGION=
AREA=
AREA=3
REGION=
MODEL=BJTMODEL
# DIODE MODEL #
MODEL = DCS
CMP8
R
R=.194 OH
CMP69
R
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
RS=2.17347E2
CJO=8.974E-14
TT=
EG=
VJ=0.6
M=0.42
N=
FC=0.8
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
CMP11
DIODEMODELFORM
CMP68
BITMODELFORM
# BJT MODEL #
NPN=yes
PNP=
MODEL = BJTMODEL
XX R-1 OH
E
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
# DIODE MODEL #
MODEL = DCE
Forward
Reverse
BF=1E6
BR=1
IKE=1.4737E-1 IKR=1.1E-2
ISE=7.094E-20 ISC=
NE=1.006
NC=2
VAF=4.4E1
VAR=3.37
NF=1
NR=1.005
TF=5.3706E-12 TR=4E-9
XTF=20
VTF=0.8
ITF=2.21805486E-1
PTF=22
XTB=0.7
APPROXOB=yes
Diode and junction
EG=1.17 CJC=2.7056E-14
IS=4.4746E-18 VJC=.6775
MJC=0.3319
IMAX=
XTI=3 XCJC=4.39790997E-1
TNOM=21
FC=0.8
Parasitics
Noise
RB=9.30144818 KF=
IRB=3.029562E-6 AF=
RBM=.1
KB=
RE=
AB=
RC=
FB=
RS=
CJO=2.593E-14
TT=
EG=
VJ=0.8971
M=2.292E-1
N=1.0029
FC=0.8
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
Substrate
IS5=
NS=
CJE=7.474248E-14
VJE=0.9907
MJE=0.5063
CJS=
VJS=
MJS=
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more
precise and accurate design, please refer to the measured data in this data sheet.
Note:
The value of beta was high (BF = 1E6) to compensate for the fact that diode DBE reduces the current going into the
base (current flows through DBE). The diodes are necessary to model the non-linear effects.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
