4
HBFP-0420 Typical Scattering Parameters,
V
CE
= 2 V, I
C
= 15 mA, T
C
= 25°C
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.481
0.437
0.416
0.414
0.415
0.418
0.421
0.428
0.435
0.439
0.442
0.447
0.455
0.467
0.484
0.504
0.527
0.552
0.572
0.590
0.604
0.616
0.630
-22.1
-91.4
-131.0
-138.0
-163.4
-174.6
178.9
165.4
153.6
143.2
133.3
123.7
114.1
104.6
95.5
86.0
76.7
68.0
60.4
53.3
46.4
39.2
31.4
29.1
26.0
22.6
21.9
18.7
17.2
16.3
14.4
12.9
11.6
10.5
9.6
8.8
8.0
7.3
6.7
6.1
5.5
4.9
4.4
3.9
3.4
3.0
28.438
19.969
13.526
12.378
8.619
7.254
6.549
5.262
4.418
3.811
3.362
3.024
2.749
2.522
2.327
2.163
2.014
1.880
1.765
1.658
1.565
1.484
1.406
166.1
124.7
101.9
97.8
81.9
74.2
69.7
59.3
49.9
41.0
32.4
23.9
15.4
6.8
-1.8
-10.4
-18.9
-27.4
-35.5
-43.6
-51.6
-59.6
-67.7
-43.0
-31.2
-28.2
-27.7
-25.5
-24.4
-23.7
-22.3
-21.0
-19.9
-18.9
-18.1
-17.3
-16.6
-16.0
-15.4
-14.9
-14.5
-14.1
-13.8
-13.4
-13.1
-12.9
0.007
0.027
0.039
0.041
0.053
0.060
0.065
0.077
0.089
0.101
0.113
0.125
0.137
0.148
0.159
0.169
0.179
0.188
0.197
0.205
0.213
0.221
0.228
82.3
60.7
53.4
52.9
49.6
47.9
46.6
42.9
38.8
34.1
29.0
23.7
17.9
11.8
5.4
-1.0
-7.6
-14.3
-20.6
-27.1
-33.6
-40.3
-47.2
0.959
0.702
0.500
0.465
0.341
0.292
0.269
0.226
0.196
0.177
0.163
0.152
0.138
0.120
0.100
0.077
0.059
0.060
0.077
0.096
0.112
0.123
0.134
-10.5
-41.4
-57.2
-59.6
-69.8
-74.4
-77.6
-84.1
-91.1
-96.8
-102.1
-107.2
-113.4
-121.1
-131.4
-148.2
-178.2
144.1
116.6
100.7
89.0
77.9
66.5
HBFP-0420 Noise Parameters:
V
CE
= 2 V, I
C
= 15 mA
Freq.
GHz
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
F
min
dB
1.57
1.58
1.63
1.67
1.74
1.72
1.76
1.84
1.89
1.97
2.03
2.15
2.28
2.36
2.42
2.54
2.65
2.83
2.96
3.10
3.14
Mag
0.033
0.054
0.169
0.252
0.234
0.306
0.343
0.365
0.383
0.407
0.431
0.463
0.483
0.513
0.538
0.560
0.581
0.602
0.621
0.640
0.653
Γ
opt
Ang
-135.5
-151.8
-155.2
-148.1
-158.3
-149.2
-142.2
-133.5
-124.4
-115.6
-106.3
-96.8
-87.3
-77.3
-67.8
-59.2
-51.4
-44.6
-37.2
-29.9
-21.8
R
N
/50
G
a
dB
23.88
23.04
19.79
18.34
17.52
15.71
14.24
12.97
11.89
11.01
10.22
9.53
8.89
8.32
7.79
7.30
6.85
6.42
5.99
5.61
5.23
Ω
8.0
7.8
6.7
6.3
6.4
6.1
6.5
7.7
9.4
11.5
14.1
17.8
22.9
28.7
35.5
43.0
51.7
61.3
71.0
81.1
90.5
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
