2
HBFP-0420 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
15.0
4.5
36
162
150
-65 to 150
Thermal Resistance:
θ
jc
= 300°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. P
T
limited by maximum ratings.
Electrical Specifications, T
C
= 25°C
Symbol
Parameters and Test Conditions
I
C
= 1 mA, open base
V
CB
= 5 V, I
E
= 0
V
EB
= 1.5 V, I
C
= 0
V
CE
= 2 V, I
C
= 5 mA
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz
Units
V
nA
µA
—
dB
dB
dB
15.5
50
80
1.1
17
17
12
Min.
4.5
150
15
150
1.4
Typ.
Max.
DC Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
I
EBO
h
FE
Collector-Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
RF Characteristics
F
MIN
Minimum Noise Figure
G
a
|S
21
|
2
P
-1 dB
Associated Gain
Insertion Power Gain
Power Output @ 1 dB
Compression Point
I
C
= 20 mA, V
CE
= 2 V, f = 1.8 GHz dBm
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
