TISP8200M & TISP8201M
Absolute Maximum Ratings for TISP8201M, TA = 25
°C
(Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, V
GA
= 0
Repetitive peak reverse voltage, V
GK
= 70 V
Non-repetitive peak on-state pulse current, (see Notes 1 and 2)
10/1000
µs
(Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
5/310
µs
(ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700
µs)
2/10
µs
(Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1, 2 and 3)
100 ms
1s
5s
300 s
900 s
Non-repetitive peak gate current, 2/10
µs
pulse, cathode commoned (see Note 1)
Junction temperature
Storage temperature range
11
6.5
3.4
1.4
1.3
-10
-55 to +150
-65 to +150
I
TSP
45
70
210
A
Symbol
V
DRM
V
RRM
Value
120
-120
Unit
V
V
I
TSM
A
I
GSM
T
J
T
stg
A
°C
°C
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40
°C
≤
T
J
≤
85
°C.
The surge may be repeated after the device returns
to its initial conditions.
2. These non-repetitive rated currents are peak values. The rated current values may be applied to any cathode-anode terminal pair.
Above 85
°C,
derate linearly to zero at 150
°C
lead temperature.
3. These non-repetitive rated terminal currents are for the TISP8200M and TISP8201M together. Device (A) terminal positive current
values are conducted by the TISP8201M and (K) terminal negative current values by the TISP8200M.
Recommended Operating Conditions
See Figure 10
C1, C2 Gate decoupling capacitor
R1, R2
Series resistance for Telcordia GR-1089-CORE first-level and second-level surge survival
Series resistance for ITU-T K.20, K.21 and K.45 coordination with a 400 V primary protector
Min
100
15
10
Typ
220
20
20
Max
Unit
nF
Ω
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
