欢迎访问ic37.com |
会员登录 免费注册
发布采购

TISP8200MDR 参数 Datasheet PDF下载

TISP8200MDR图片预览
型号: TISP8200MDR
PDF下载: 下载PDF文件 查看货源
内容描述: 互补BUFFERED -GATE SCRS用于双极性SLIC过压保护 [COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION]
分类和应用:
文件页数/大小: 13 页 / 325 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
 浏览型号TISP8200MDR的Datasheet PDF文件第3页浏览型号TISP8200MDR的Datasheet PDF文件第4页浏览型号TISP8200MDR的Datasheet PDF文件第5页浏览型号TISP8200MDR的Datasheet PDF文件第6页浏览型号TISP8200MDR的Datasheet PDF文件第8页浏览型号TISP8200MDR的Datasheet PDF文件第9页浏览型号TISP8200MDR的Datasheet PDF文件第10页浏览型号TISP8200MDR的Datasheet PDF文件第11页  
TISP8200M & TISP8201M
SLIC Parameter Values
The table below shows some details of currently available SLICs using positive and negative supply rails.
Manufacturer
SLIC SERIES
SLIC #
Data Sheet Issue
Short Circuit Current
V
BATH
max.
V
BATR
max.
V
BATR
-V
BATH
max.
AC Ringing for:
V
BATH
V
BATR
V
BATR
-V
BATH
R or T Power Max. < 10 ms
R or T Overshoot < 10 ms
R or T Overshoot < 1 ms
R or T Overshoot < 10
µs
R or T Overshoot < 1
µs
R or T Overshoot < 250 ns
Line Feed Resistance
20 + 30
-10
-10
SLIC-S‡
PEB4264
14/07/2000
±130
-70
+50
90
45
-54
+36
90
TBA
INFINEON‡
SLIC-E‡
PEB 4265
14/07/2000
±130
-90
+90
160
85
-70
+80
150
10
LEGERITY™‡
ISLIC™‡
79R251
-/08/2000
±150
-85
+85
150
65
-68
+52
120
Unit
mA
V
V
V
V rms
V
V
V
W
-5
+10
+30
-10
-10
+10
+30
-10
-15
20 + 30
50
5
V
V
V
10
15
V
V
‡ Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. (formerly AMD’s Communication Products Division).
Other product names used in this publication are for identification purposes only and may be trademarks of their respective
companies.
The maximum total voltage, VBATR - VBATH, is normally about 10 % less than the sum of the maximum VBATR and maximum VBATH values.
In terms of voltage overshoot,
±10
V is needed for 1
µs
and
±15
V for 250 ns. It is important to define the protector overshoot under actual
circuit conditions. For example, if the series line feed resistor was 20
Ω,
R1 in Figure 10, and Telcordia GR-1089-CORE 2/10 and 10/1000 first
level impulses were applied, the peak protector currents would be 100 A and 33 A. Therefore, the protector voltage overshoot should be
measured at 100 A, 2/10 and 33 A, 10/1000.
Using the table values for maximum battery voltage and minimum overshoot gives a requirement of
±105
V from the output to ground and
±175
V between outputs. There needs to be temperature guard banding for the change in protector characteristics with temperature. To cover
down to -40
°C,
the 25
°C
protector minimum values become
±120
V referenced to ground,
±190
V between outputs and 100 V or -100 V on
the gate.
Operation of Gated Protectors
Figure 5 shows how the TISP8200M and TISP8201M limit overvoltages. The TISP8200M SCR sections limit negative overvoltages and the
TISP8201M SCR sections limit positive overvoltages.
The TISP8200M (buffered) gate is connected to the negative SLIC battery feed voltage (VBATH) to provide the protection reference voltage.
Negative overvoltages are initially clipped close to the SLIC negative supply rail value (VBATH) by the conduction of the TISP8200M transistor
base-emitter and the SCR gate-cathode junctions. If sufficient current is available from the overvoltage, then the SCR will crowbar into a low
voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the SCR prevents d.c. latchup with the
SLIC output current.
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.