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TISP8200MDR 参数 Datasheet PDF下载

TISP8200MDR图片预览
型号: TISP8200MDR
PDF下载: 下载PDF文件 查看货源
内容描述: 互补BUFFERED -GATE SCRS用于双极性SLIC过压保护 [COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION]
分类和应用:
文件页数/大小: 13 页 / 325 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP8200M & TISP8201M
Electrical Characteristics for TISP8200M, TA = 25
°C
(Unless Otherwise Noted)
Parameter
I
D
I
R
V
(BO)
V
(BO)
I
H
I
GT
C
off
Off-state current
V
D
= V
DRM
, V
GK
= 0
V
R
= V
RRM
, V
GA
= -70 V
Test Conditions
T
J
= 0
°C
T
J
= 85
°C
T
J
= 0
°C
T
J
= 85
°C
Min
Typ
Max
-5
-50
5
50
-82
-95
-150
5
V
D
= 0
Off-state capacitance
f = 1 MHz, V
d
= 1 V, V
GA
= -80 V, (see Note 4)
V
D
= -5 V
V
D
= -50 V
NOTE
35
20
10
pF
Unit
µA
µA
µA
µA
V
V
mA
mA
Reverse current
Breakover voltage
Breakover voltage
Holding current
Gate trigger current
dv/dt = -250 V/ms, Source Resistance = 300
, V
GA
= -80 V
2/10 waveshape, (I
K
) I
T
= -100 A, di/dt
max.
= -58 A/µs, V
GA
= -80 V
(I
K
) I
T
= -1 A, di/dt = 1 A/ms, V
GA
= -80 V
(I
K
) I
T
= -5 A, t
p(g)
20
µs,
V
GA
= -80 V
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Electrical Characteristics for TISP8201M, TA = 25
°C
(Unless Otherwise Noted)
Parameter
I
D
I
R
V
(BO)
V
(BO)
I
H
I
GT
C
off
Off-state current
V
D
= V
DRM
, V
GA
= 0
V
R
= V
RRM
, V
GK
= 70 V
dv/dt = 250 V/ms, Source Resistance = 300
, V
GK
= 80 V
2/10 waveshape, (I
A
) I
T
= 100 A, di/dt
max.
= 58 A/µs, V
GK
= 80 V
(I
A
) I
T
= 1 A, di/dt = -1 A/ms, V
GK
= 80 V
(I
A
) I
T
= 5 A, t
p(g)
20
µs,
V
GK
= 80 V
V
D
= 0
Off-state capacitance
f = 1 MHz, V
d
= 1 V, V
GK
= 80 V, (see Note 4)
V
D
= 5 V
V
D
= 50 V
NOTE
+20
-5
35
20
10
pF
Test Conditions
T
J
= 0
°C
T
J
= 85
°C
T
J
= 0
°C
T
J
= 85
°C
Min
Typ
Max
5
50
-5
-50
82
95
Unit
µA
µA
µA
µA
V
V
mA
mA
Reverse current
Breakover voltage
Breakover voltage
Holding current
Gate trigger current
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
R
θ
JA
Junction to free air thermal resistance
Test Conditions
P
tot
= 0.52 W, T
A
= 70°C, 5 cm
2
, FR4 PCB
Min
Typ
Max
160
Unit
°C/W
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.