BSI
n
DC ELECTRICAL CHARACTERISTICS (T
A
= -25 C to +85 C)
PARAMETER
NAME
V
CC
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
I
CC1
I
CCSB
I
CCSB1
1.
2.
3.
4.
5.
(5)
BH62UV8000
O
O
PARAMETER
Power Supply
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating
Current
Power
Supply
TEST CONDITIONS
MIN.
1.65
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
TYP.
(1)
--
--
--
--
--
--
--
4.5
5.0
1.0
1.5
--
2.5
2.5
MAX.
3.6
0.4
0.8
V
CC
+0.3
(3)
1
1
0.2
0.4
--
7
10
1.5
2.0
0.5
1.0
12
15
UNITS
V
V
V
uA
uA
V
V
mA
mA
mA
uA
-0.3
(2)
1.4
2.0
--
--
V
IN
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
V
I/O
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
or OE = V
IH
V
CC
= Max, I
OL
= 0.1mA
V
CC
= Max, I
OL
= 2.0mA
V
CC
= Min, I
OH
= -0.1mA
V
CC
= Min, I
OH
= -1.0mA
CE1 = V
IL
, CE2 = V
IH
,
I
DQ
= 0mA, f = F
MAX(4)
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = 1MHz
CE1 = V
IH
, or CE2 = V
IL
,
I
DQ
= 0mA
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
--
V
CC
-0.2
2.4
--
--
--
--
Operating Power Supply
Current
Standby Current
–
TTL
Standby Current
–
CMOS
Typical characteristics are at T
A
=25
O
C.
Undershoot: -1.0V in case of pulse width less than 20 ns.
Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
F
MAX
=1/t
RC.
I
CCSB1(MAX.)
is 10uA/13uA at V
CC
=1.8V/3.6V and T
A
=0
O
C ~ 70
O
C.
O
O
n
DATA RETENTION CHARACTERISTICS (T
A
= -25 C to +85 C)
SYMBOL
V
DR
I
CCDR
(3)
PARAMETER
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
TEST CONDITIONS
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
V
CC
=1.0V
V
CC
=2.0V
MIN.
1.0
--
0
TYP.
(1)
--
0.5
2.5
--
--
MAX.
--
3.0
12
--
--
UNITS
V
uA
ns
ns
t
CDR
t
R
See Retention Waveform
t
RC (2)
1. T
A
=25
O
C.
2. t
RC
= Read Cycle Time.
3. I
CCDR(MAX.)
is 2.5uA /10uA at V
CC
=1.0V/2.0V and T
A
=0
O
C ~ 70
O
C.
n
LOW V
CC
DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
V
CC
V
IH
V
CC
V
DR
≧1.0V
V
CC
t
CDR
CE1≧V
CC
- 0.2V
t
R
V
IH
CE1
R0201-BH62UV8000
3
Revision 1.0
Jul.
2005
BSI [ BRILLIANCE SEMICONDUCTOR ]
