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BH62UV8000AI 参数 Datasheet PDF下载

BH62UV8000AI图片预览
型号: BH62UV8000AI
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM [Ultra Low Power/High Speed CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 127 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
n
LOW V
CC
DATA RETENTION WAVEFORM (2) (CE2 Controlled)
Data Retention Mode
V
CC
V
DR
≧1.0V
BH62UV8000
V
CC
V
CC
t
CDR
t
R
CE2≦0.2V
CE2
V
IL
V
IL
n
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing
Reference Level
t
CLZ1
, t
CLZ2
, t
OLZ
, t
CHZ1
,
t
CHZ2
, t
OHZ
, t
WHZ
, t
OW
Output Load
Others
V
CC
/ 0V
1V/ns
0.5Vcc
C
L
= 5pF+1TTL
C
L
= 30pF+1TTL
n
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
MUST BE
STEADY
MAY CHANGE
FROM
“H”
TO
“L”
MAY CHANGE
FROM
“L”
TO
“H”
ALL INPUT PULSES
OUTPUTS
MUST BE
STEADY
WILL BE CHANGE
FROM
“H”
TO
“L”
WILL BE CHANGE
FROM
“L”
TO
“H”
CHANGE :
STATE UNKNOW
CENTER LINE IS
HIGH INPEDANCE
“OFF”
STATE
1 TTL
Output
C
L(1)
V
CC
GND
10%
90%
90%
10%
DON’T CARE
ANY CHANGE
PERMITTED
DOES NOT
APPLY
→ ←
Rise Time:
1V/ns
→ ←
Fall Time:
1V/ns
1. Including jig and scope capacitance.
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -25 C to +85 C)
READ CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
CYCLE TIME : 70ns
DESCRIPTION
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Chip Select to Output High Z
Output Enable to Output High Z
Data Hold from Address Change
(CE1)
(CE2)
(CE1)
(CE2)
(CE1)
(CE2)
MIN.
70
--
--
--
--
10
10
5
--
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
70
70
70
30
--
--
--
25
25
25
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
O
O
t
AVAX
t
AVQX
t
E1LQV
t
E2LQV
t
GLQV
t
E1LQX
t
E2LQX
t
GLQX
t
E1HQZ
t
E2HQZ
t
GHQZ
t
AVQX
t
RC
t
AA
t
ACS1
t
ACS2
t
OE
t
CLZ1
t
CLZ2
t
OLZ
t
CHZ1
t
CHZ2
t
OHZ
t
OH
R0201-BH62UV8000
4
Revision 1.0
Jul.
2005