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BS616LV2020DI 参数 Datasheet PDF下载

BS616LV2020DI图片预览
型号: BS616LV2020DI
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 128K ×16或256K ×8位切换 [Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 251 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
ADDRESS
BS616LV2020
t
RC
t
OH
AA
t
D
OUT
t
OH
READ CYCLE2
(1,3,4)
CE2
t
t
ACS2
ACS1
CE1
t
D
OUT
(5)
CLZ
t
CHZ
(5)
READ CYCLE3
(1,4)
ADDRESS
t
RC
t
OE
AA
t
CE2
OE
t
OH
t
ACS2
t
OLZ
t
ACS1
t
(5)
CLZ
CE1
t
OHZ
(5)
(1,5)
t
CHZ
LB,UB
t
BE
t
BA
D
OUT
t
BDO
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2 = V
IH
.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
R0201-BS616LV2020
7
Revision 2.3
April 2002