欢迎访问ic37.com |
会员登录 免费注册
发布采购

CY7C1041CV33-12ZXC 参数 Datasheet PDF下载

CY7C1041CV33-12ZXC图片预览
型号: CY7C1041CV33-12ZXC
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )静态RAM [4-Mbit (256K x 16) Static RAM]
分类和应用:
文件页数/大小: 14 页 / 428 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
 浏览型号CY7C1041CV33-12ZXC的Datasheet PDF文件第1页浏览型号CY7C1041CV33-12ZXC的Datasheet PDF文件第2页浏览型号CY7C1041CV33-12ZXC的Datasheet PDF文件第3页浏览型号CY7C1041CV33-12ZXC的Datasheet PDF文件第5页浏览型号CY7C1041CV33-12ZXC的Datasheet PDF文件第6页浏览型号CY7C1041CV33-12ZXC的Datasheet PDF文件第7页浏览型号CY7C1041CV33-12ZXC的Datasheet PDF文件第8页浏览型号CY7C1041CV33-12ZXC的Datasheet PDF文件第9页  
CY7C1041CV33
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
CC
Relative to GND
.....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
...................................... –0.5V to V
CC
+0.5V
DC Input Voltage
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Automotive-A
Automotive -E
Ambient
Temperature (T
A
)
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
–40°C to +125°C
V
CC
3.3V
±
10%
.................................. –0.5V to V
CC
+0.5V
Current into Outputs (LOW)......................................... 20 mA
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL [2]
I
IX
Description
Test Conditions
-10
Min
2.4
0.4
2.0
–0.3
GND < V
I
< V
CC
Com’l/Ind’l
Auto-A
Auto-E
I
OZ
Output Leakage
Current
GND < V
OUT
< V
CC
, Com’l/Ind’l
Output disabled
Auto-A
Auto-E
I
CC
V
CC
Operating
Supply Current
V
CC
= Max,
f = f
MAX
= 1/t
RC
Com’l
Ind’l
Auto-A
Auto-E
I
SB1
Automatic CE Power Max V
CC
,
Down Current —TTL CE > V
IH
V
IN
> V
IH
or
Inputs
V
IN
< V
IL
, f = f
MAX
Com’l/Ind’l
Auto-A
Auto-E
10
10
15
40
40
45
10
10
90
100
100
120
40
40
–1
–1
+1
+1
–20
+20
85
95
80
90
–1
–1
V
CC
+ 0.3
0.8
+1
+1
–20
–1
+20
+1
–1
+1
2.0
–0.3
–1
Max
2.4
0.4
V
CC
+ 0.3
0.8
+1
2.0
–0.3
–1
-12
Min
Max
2.4
0.4
V
CC
+ 0.3
0.8
+1
2.0
–0.3
–1
–1
–20
–1
–1
–20
-15
Min
Max
2.4
0.4
V
CC
+ 0.3
0.8
+1
+1
+20
+1
+1
+20
75
85
85
90
40
40
45
10
10
15
mA
mA
mA
μA
-20
Min
Max
Unit
V
V
V
V
μA
Output HIGH Voltage V
CC
= Min, I
OH
= –4.0 mA
Output LOW Voltage V
CC
= Min, I
OL
= 8.0 mA
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
I
SB2
Automatic CE Power Max V
CC
,
Com’l/Ind’l
Down Current —
CE > V
CC
– 0.3V, Auto-A
CMOS Inputs
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0 Auto-E
Note
2. V
IL
(min) = –2.0V and V
IH
(max) = V
CC
+ 0.5V for pulse durations of less than 20 ns.
Document Number: 38-05134 Rev. *I
Page 4 of 14