CY7C1061AV33
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
...................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
............................... –0.5V to V
CC
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
V
CC
3.3V
±
0.3V
DC Electrical Characteristics
(Over the Operating Range)
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Test Conditions
I
OH
= –4.0 mA
I
OL
= 8.0 mA
–10
Min
2.4
0.4
2.0
–0.3
–1
–1
V
CC
+ 0.3
0.8
+1
+1
275
275
70
2.0
–0.3
–1
–1
Max
Min
2.4
–12
Max
0.4
V
CC
+ 0.3
0.8
+1
+1
260
260
70
Unit
V
V
V
V
µA
µA
mA
mA
mA
Input Leakage Current GND < V
I
< V
CC
Output Leakage Current GND < V
O
< V
CC
, Output Disabled
V
CC
Operating
Supply Current
Automatic CE
Power-down Current
—TTL Inputs
Automatic CE
Power-down Current
—CMOS Inputs
V
CC
= max,
f = f
max
= 1/t
RC
Commercial
Industrial
CE
2
<= V
IL,
max V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
max
CE
2
<= 0.3V
Commercial/
Industrial
max V
CC
,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
I
SB2
50
50
mA
Capacitance
Parameter
C
IN
C
OUT
Description
Input Capacitance
IO Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V
TSOP II
6
8
FBGA
8
10
Unit
pF
pF
AC Test Loads and Waveforms
50Ω
OUTPUT
Z
0
= 50Ω
V
TH
= 1.5V
30 pF* * Capacitive Load consists of all com-
ponents of the test environment.
ALL INPUT PULSES
90%
10%
90%
10%
Fall time:
> 1V/ns
3.3V
OUTPUT
5 pF*
INCLUDING
JIG AND
SCOPE
(b)
R2
351Ω
R1 317
Ω
(a)
3.3V
GND
Rise time > 1V/ns
(c)
Notes
3. V
IL
(min) = –2.0V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
DD
(3.0V). As soon as 1 ms (T
power
) after reaching the
minimum operating V
DD
, normal SRAM operation can begin including reduction in V
DD
to the data retention (V
CCDR
, 2.0V) voltage.
Document #: 38-05256 Rev. *G
Page 3 of 10
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