ZXMN6A08G
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
@ V
GS
= 10V; T
amb
= 25°C
@ V
GS
= 10V; T
amb
= 70°C
@ V
GS
= 10V; T
amb
= 25°C
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
amb
= 25°C
Linear derating factor
Power dissipation at T
amb
= 25°C
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
I
DM
I
S
I
SM
P
D
Symbol
V
DSS
V
GS
I
D
Limit
60
± 20
5.3
4.2
3.8
20
2.1
20
2
16
3.9
31
-55 to +150
A
A
A
W
mW/°C
W
mW/°C
°C
Unit
V
V
A
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Symbol
R
JA
R
JA
Limit
62.5
32
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
© Zetex Semiconductors plc 2006
DIODES [ DIODES INCORPORATED ]
