ZXMN6A08G
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate-body leakage
Gate-source threshold
voltage
Static drain-source on-state
resistance
Forward transconductance
(*) (‡)
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
(†) (‡)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
0.88
19.2
30.3
1.2
V
ns
nC
T
j
=25°C, I
S
= 4A,
V
GS
=0V
Tj=25°C, I
S
= 1.4A,
di/dt=100A/ s
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
2.6
2.1
12.3
4.6
4.0
5.8
1.4
1.9
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
= 30V, V
GS
= 5V
I
D
= 1.4A
V
DS
= 30V, V
GS
= 10V
I
D
= 1.4A
V
DD
= 30V, I
D
= 1.5A
R
G
≅6.0
, V
GS
= 10V
C
iss
C
oss
C
rss
459
44.2
24.1
pF
pF
pF
V
DS
= 40V, V
GS
=0V
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
6.6
1
0.080
0.150
S
60
0.5
100
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
= 60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 4.8A
V
GS
= 4.5V, I
D
= 4.2A
V
DS
= 15V, I
D
= 4.8A
Symbol
Min.
Typ.
Max.
Unit
Conditions
NOTES:
(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
© Zetex Semiconductors plc 2006
DIODES [ DIODES INCORPORATED ]
