ZXMS6002G
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static characteristics
Drain-source clamp voltage
Off state drain current
Off state drain current
Input threshold voltage
(*)
Input current
Input current
Input current
Static drain-source on-state
resistance
Static drain-source on-state
resistance
Current limit
(†)
Current limit
Dynamic characteristics
Turn-off time (V
IN
to 90% I
D
)
t
off
13
8
3.2
20
20
10
s
V/ s
V/ s
R
L
=22 , V
IN
=10V to
0V, V
DD
=12V
R
L
=22 , V
IN
=0 to
10V, V
DD
=12V
R
L
=22 , V
IN
=10V to
0V, V
DD
=12V
V
DS(AZ)
I
DSS
I
DSS
V
IN(th)
I
IN
I
IN
I
IN
R
DS(on)
R
DS(on)
I
D(LIM)
I
D(LIM)
0.7
1.0
1
60
70
0.1
3
2.1
0.7
1.5
4
520
385
1.0
1.8
1.2
2.7
7
675
500
1.5
2.3
75
3
15
V
A
A
V
mA
mA
mA
m
m
A
A
I
D
=10mA
V
DS
=12V, V
IN
=0V
V
DS
=32V, V
IN
=0V
V
DS
=V
GS
, I
D
=1mA
V
IN
=+5V
V
IN
=+7V
V
IN
=+10V
V
IN
=5V, I
D
=0.7A
V
IN
=10V, I
D
=0.7A
V
IN
=5V, V
DS
>5V
V
IN
=10V, V
DS
>5V
Symbol
Min.
Typ.
Max.
Unit
Conditions
Slew rate on (70 to 50% V
DD
) -dV
DS
/dt
on
Slew rate off (50 to 70% V
DD
) DV
DS
/dt
on
Protection functions
(‡)
Required input voltage for
over temperature protection
Thermal overload trip
temperature
Thermal hysteresis
Unclamped single pulse
inductive energy
T
j
=25°C
Unclamped single pulse
inductive energy
T
j
=150°C
E
AS
550
V
PROT
T
JT
4.5
150
V
175
1
°C
°C
mJ
I
D(ISO
)=0.7A,
V
DD
=32V
I
D(ISO
)=0.7A,
V
DD
=32V
E
AS
200
mJ
© Zetex Semiconductors plc 2007
DIODES [ DIODES INCORPORATED ]
