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ZXMS6002GTA 参数 Datasheet PDF下载

ZXMS6002GTA图片预览
型号: ZXMS6002GTA
PDF下载: 下载PDF文件 查看货源
内容描述: 60V N沟道自我保护的增强型 [60V N-Channel self protected enhancement mode]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 655 K
品牌: DIODES [ DIODES INCORPORATED ]
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ZXMS6002G
Absolute maximum ratings
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection V
IN
=5V
Drain-source voltage for short circuit protection
V
IN
=10V
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation @ T
amb
=25°C
Continuous drain current @ V
IN
=10V; T
amb
=25°C
Continuous drain current @ V
IN
=5V; T
amb
=25°C
Continuous source current (body diode)
Pulsed source current (body diode)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V
DS
V
DS(SC)
V
DS(SC)
V
IN
V
IN
T
j
,
T
stg
P
D
I
D
I
D
I
S
I
S
E
AS
V
LoadDump
V
ESD
Limit
60
36
20
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
2.5
1.6
1.4
3
4.7
550
80
4000
E
40/150/56
Unit
V
V
V
V
V
°C
°C
W
A
A
A
A
mJ
V
V
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Symbol
R
JA
R
JA
Limit
50
28
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
© Zetex Semiconductors plc 2007