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ZXMS6002GTA 参数 Datasheet PDF下载

ZXMS6002GTA图片预览
型号: ZXMS6002GTA
PDF下载: 下载PDF文件 查看货源
内容描述: 60V N沟道自我保护的增强型 [60V N-Channel self protected enhancement mode]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 10 页 / 655 K
品牌: DIODES [ DIODES INCORPORATED ]
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ZXMS6002G
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Status flag
Normal operation
Current limit operating
Thermal shutdown activated
Normal operation
Current limit operation
Thermal shutdown activated
Inverse diode
Source drain voltage
V
SD
1
V
V
IN
=0V, -I
D
=1.4A,
V
STATUS
V
STATUS
V
STATUS
V
STATUS
V
STATUS
V
STATUS
4.95
2.5
0.2
8.0
3.0
0.35
1
1
V
V
V
V
V
V
V
IN
= 5V
V
IN
= 5V
V
IN
= 5V
V
IN
= 10V
V
IN
= 10V
V
IN
= 10V
Symbol
Min.
Typ.
Max.
Unit
Conditions
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
(†) The drain current is limited to a reduced value when Vds exceeds a safe level
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
© Zetex Semiconductors plc 2007