PZT2222 / PZT2222A
Characteristics (T
j
= 25°C)
Min.
Base saturation voltage – Basis-Sättigungsspannung
)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
DC current gain – Kollektor-Basis-Stromverhältnis
I
C
I
C
I
C
I
C
=
=
=
=
0.1 mA,
1 mA,
10 mA,
150 mA,
V
CE
V
CE
V
CE
V
CE
=
=
=
=
10
10
10
10
V
V
V
V
2
)
PZT2222
PZT2222A
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
f
T
C
CBO
C
EBO
t
d
I
Con
= 150 mA
I
Bon
= 15 mA
- I
Boff
= 15 mA
t
r
t
s
t
f
R
thA
R
thS
35
50
75
100
30
40
200 MHz
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
< 93 K/W
)
< 27 K/W
PZT2907, PZT2907A
–
–
–
300
–
–
–
8 pF
30 pf
10 ns
25 ns
225 ns
60 ns
PZT2222
PZT2222A
PZT2222
PZT2222A
V
BEsat
V
BEsat
V
BEsat
V
BEsat
–
–
–
–
–
–
–
–
1.3 V
1.2 V
2.6 V
2.0 V
Kennwerte (T
j
= 25°C)
Typ.
Max.
I
C
= 500 mA, V
CE
= 10 V
2
)
Gain-Bandwidth Product – Transitfrequenz
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Switching times – Schaltzeiten
delay time
rise time
storage time
fall time
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
2
1
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
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© Diotec Semiconductor AG
2
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