FDC637AN
Typical Characteristics
20
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
16
3.0V
2.5V
2.0V
2
12
1.5
V
GS
= 2.0V
2.5V
3.0V
8
1
4.5V
4
1.5V
0
0
0.4
0.8
1.2
1.6
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.5
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
0.08
R
DS(ON)
, ON RESISTANCE (OHM)
I
D
= 6.2A
V
GS
= 4.5V
I
D
= 6.2A
0.06
0.04
T
J
= 125 C
25 C
0.02
o
o
0
-25
0
25
50
75
100
o
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
20
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
15
25 C
o
100
125 C
o
I
S
, REVERSE DRAIN CURRENT (A)
T
J
= -55 C
o
V
GS
= 0
10
1
0.1
0.01
0.001
0.0001
T
J
= 125 C
25 C
-55 C
o
o
o
10
5
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC637AN, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
