FDC637AN
Typical Characteristics
(continued)
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 6.2A
4
CAPACITANCE (pF)
V
DS
= 5V
10V
15V
1800
1500
1200
900
600
300
0
0
2
4
6
8
10
12
14
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
C
rss
f = 1MHz
V
GS
= 0V
3
C
iss
2
1
0
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
100
5
100
µ
s
1ms
10ms
100ms
1s
DC
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 156 C/W
T
A
= 25 C
o
o
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
10
SINGLE PULSE
o
R
θJA
= 156 C/W
4
T
A
= 25 C
o
POWER (W)
100
3
1
2
0.1
1
0.01
0.1
1
10
0
0.1
1
10
SINGLE PULSE TIME (SEC)
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 156°C/W
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDC637AN, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
