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FDP8896 参数 Datasheet PDF下载

FDP8896图片预览
型号: FDP8896
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的30V , 92A , 5.9mз [N-Channel PowerTrench MOSFET 30V, 92A, 5.9mз]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 10 页 / 260 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDP8896
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
100
CURRENT LIMITED
BY PACKAGE
80
I
D
, DRAIN CURRENT (A)
0.8
V
GS
= 10V
60
V
GS
= 4.5V
40
POWER DISSIPATION MULTIPLIER
1.0
0.6
0.4
0.2
20
0
0
25
50
75
100
125
(
o
C)
150
175
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
T
C
= 25
o
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
V
GS
= 4.5V
175 - T
C
150
I
DM
, PEAK CURRENT (A)
100
50
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
FDP8896 Rev. A1