FDS4935BZ
September 2006
tm
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
–6.9 A, –30 V. R
DS(ON)
= 22 m
R
DS(ON)
= 35 m
@ V
GS
= –10 V
@ V
GS
= – 4.5 V
Extended V
GSS
range (–25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D2
D
D2
D
D
D1
D1
D
5
6
7
Q1
4
3
2
Q2
SO-8
Pin 1
SO-8
G2
S
S2
S
S
G1
S1
G
8
1
Absolute Maximum Ratings
Symbol
V
DS\
V
GS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–30
+25
(Note 1a)
Units
V
V
A
W
–6.9
–50
1.6
1.0
0.9
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
R
R
JA
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDS4935BZ
2006 Fairchild Semiconductor Corporation
Device
FDS4935BZ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS4935BZ Rev B1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
