FDS4935BZ
Typical Characteristics
50
V
GS
= -10V
40
-I
D
, DRAIN CURRENT (A)
-6.0V
30
-5.0V
3
V
GS
= -3.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.5V
2.6
2.2
-4.0V
-4.0V
1.8
-4.5V
-5.0V
20
-3.5V
10
-3.0V
0
0
1
2
3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
1.4
-6.0V
-8.0V
-10V
1
0.6
0
10
20
30
-I
D
, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -8.8A
V
GS
= -10V
I
D
= -4.4A
0.06
1.4
1.2
T
A
= 125
o
C
0.04
T
A
= 25
o
C
0.02
1
0.8
0.6
-50
-25
0
25
50
75
100
o
T
J
, JUNCTION TEMPERATURE ( C)
125
150
0
2
4
6
8
-V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
40
V
GS
= 0V
10
T
A
= 125
o
C
30
1
25 C
o
20
T
A
= 125 C
10
25 C
0
2
2.5
o
o
0.1
-55
o
C
-55
o
C
0.01
0.001
3
3.5
4
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
5
0
0.4
0.8
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935BZ Rev B1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
