FDS4935BZ
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -8.8A
2000
f = 1 MHz
V
GS
= 0 V
1600
-20V
CAPACITANCE (pF)
V
DS
= -10V
C
iss
1200
8
6
-15V
4
800
C
oss
400
C
rss
0
2
0
0
6
12
18
24
Q
g
, GATE CHARGE (nC)
30
36
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
100 s
1ms
10ms
100ms
50
Figure 8. Capacitance Characteristics.
-I
D
, DRAIN CURRENT (A)
40
10
SINGLE PULSE
R
JA
= 125°C/W
T
A
= 25°C
30
1
DC
V
GS
= -10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25 C
o
1s
20
0.1
10
0.01
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
JA
(t)
= r(t) * R
o
JA
0.1
0.1
0.05
0.02
0.01
R
JA
= 125 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4935BZ Rev B1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
