Typical Electrical Characteristics
-1.4
I
D
, DRA IN-SOURCE CURRENT (A)
V
GS
= -10V
-1.2
-1
-0.8
-0.6
-9
DRA IN-SOURCE ON -RESISTANCE
2.2
-8
-7
R
DS(on)
, NORMALIZED
V
GS
= -4V
2
-5
1.8
1.6
1.4
1.2
1
0.8
-6
-7
-8
-9
-10
-6
-5
-0.4
-0.2
0
0
-2
-4
-6
-8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
-10
-4
0
-0.2
-0.4
-0.6
-0.8
-1
I
D
, DRA IN CURRENT (A)
-1.2
-1.4
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
1.8
3
DRAIN-SOURCE ON -RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
I
1.6
D
= -0.5A
TJ = 125°C
2 .5
V
GS
-4.5V
-10V
25
R
DS(ON)
, NORM A LIZED
V
GS
= -10V
R
DS(on)
, NORMALIZED
1.4
2
-55
125
1.2
1 .5
1
25
1
0.8
-55
0 .5
0
-0.2
-0.4
-0.6
-0.8
-1
I
D
, DRAIN CURRENT (A)
-1.2
-1.4
0.6
-5 0
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
-1.2
1 .1
V
DS
= -10V
-1
I
D
, DRA IN CURRENT (A)
TJ = -55°C
25
125
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= V
GS
I
D
= -1m A
1 .05
-0.8
1
-0.6
0 .95
-0.4
0 .9
-0.2
0 .85
0
0
-2
-4
-6
-8
V
GS
, GATE TO SOURCE VOLTAGE (V)
-10
0 .8
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
NDS0610.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
