Typical Electrical Characteristics
(continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
1 .15
1 .5
-I
S
, REVERSE DRAIN CURRENT (A)
I
D
= -10µA
1 .1
V
GS
= 0V
1
, NORMALIZED
1 .05
0 .5
TJ = 125°C
25
S
BV
D
1
0 .3
-5 5
0 .2
S
0 .95
0 .9
-50
-25
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
0 .1
0 .6
0 .8
1
1 .2
1 .4
1 .6
-V
SD
, BODY DIODE FORW A RD VOLTAGE (V)
1 .8
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
70
-10
C iss
V
GS
, GATE-SOURCE VOLTAGE (V)
50
30
-8
V
DS
= -12V
CAPACITANCE (pF)
-24
-4 8
20
-6
10
C oss
-4
5
f = 1 MHz
3
2
0 .1
C rss
-2
V
GS
= 0V
0 .2
0 .5
1
2
5
10
20
-V
DS
, DRA IN TO SOURCE VOLTAGE (V)
30
60
I
D
= -0.5A
0
0
0 .2
0 .4
0 .6
0 .8
1
Q
g
, GATE CHARGE (nC)
1 .2
1 .4
1 .6
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
0 .4
, TRANSCONDUCTANCE (SIEM ENS)
T J = -55°C
0 .3
25
125
0 .2
0 .1
g
FS
V
DS
= -10V
0
0
-0.2
-0.4
-0.6
-0.8
-1
I
D
, DRAIN CURRENT (A)
-1.2
-1.4
Figure 11. Transconductance Variation with Drain
Current and Temperature
NDS0610.SAM
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
