Typical Electrical Characteristics
-30
3
V
GS
= -10V
I
D
, DRAIN-SOURCE CURRENT (A)
-25
-6.0 -5.0-4.5
DRAIN-SOURCE ON-RESISTANCE
-4.0
V
GS
= -3.0V
2.5
-20
-3.5
R
DS(on)
, NORMALIZED
-3.5
2
-15
-4.0
1.5
-4.5
-5.0
-6.0
-10
-10
-3.0
-5
1
-2.5
0
0
-0.5
-1
-1.5
-2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
-2.5
-3
0.5
0
-5
-10
-15
-20
I
D
, DRAIN CURRENT (A)
-25
-30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
2
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
1.4
V
GS
= -10V
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
=-7.0A
V
GS
= -10V
1.5
T J = 125°C
1.2
1
25°C
1
0.8
-55°C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.5
0
-5
-10
-15
-20
I
D
, DRAIN CURRENT (A)
-25
-30
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
-20
1.2
125°C
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= -10V
-16
T = -55°C
J
1.1
V
DS
= V
GS
I
D
= -250µA
I
D
, DRAIN CURRENT (A)
V
th
, NORMALIZED
25°C
-12
1
0.9
-8
0.8
-4
0.7
0
-1
-2
-3
-4
-5
V
GS
, GATE TO SOURCE VOLTAGE (V)
-6
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDS8435 Rev. B2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
