Typical Electrical Characteristics (continued)
1.1
20
10
5
V GS = 0V
I D = -250µA
1.08
T
= 125°C
25°C
1.06
1.04
1.02
1
-55°C
J
1
0.5
0.1
0.01
0.98
0.96
0.94
0.001
-50
-25
0
25
50
75
100
125
150
0.2
0.4
-V
0.6
0.8
1
1.2
T
, JUNCTION TEMPERATURE (°C)
, BODY DIODE FORWARD VOLTAGE (V)
SD
J
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
4000
2000
10
VDS = -5.0V
I D = -7.0A
-15V
8
6
4
2
0
C
C
-10V
iss
1000
800
oss
500
C
rss
f = 1 MHz
VGS = 0V
300
200
0.1
0.2
0.5
1
2
5
10
30
0
10
20
30
40
50
-V
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
DS
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
ton
toff
-VDD
td(off)
td(on)
tf
tr
RL
90%
VIN
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
DUT
G
V
50%
50%
IN
S
10%
INVERTED
PULSE W IDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDS8435 Rev. B2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
