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NDS8858H 参数 Datasheet PDF下载

NDS8858H图片预览
型号: NDS8858H
PDF下载: 下载PDF文件 查看货源
内容描述: Complementry MOSFET半桥 [Complementry MOSFET Half Bridge]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 12 页 / 351 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Thermal Characteristics
7
I
D
, STEADY-STATE DRAIN CURRENT (A)
-I
D
, STEADY-STATE DRAIN CURRENT (A)
1a
7
6
6
5
1b
1c
5
1a
4
4
1b
1c
4.5"x5" FR-4 Board
T
A
= 2 5 C
Still Air
V
G S
= - 1 0 V
o
3
4.5"x5" FR-4 Board
T
A
= 2 5 C
Still Air
V
G S
= 1 0 V
o
3
2
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in
2
)
1
2
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in
2
)
1
Figure 24. N-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
Figure 25. P-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
50
20
10
I
D
, DRAIN CURRENT (A)
5
RD
S(O
LI
N)
T
MI
10
1m
s
50
0u
s
10
N)
I
LIM
T
20
10
-I
D
, DRAIN CURRENT (A)
5
RD
S(O
0u
s
1m
s
10
10
ms
s
10
10
ms
s
1
0.5
0m
0m
1s
1
0.5
1s
V
GS
= 10V
0.1
0.05
DC
10
s
V
GS
= -10V
0.1
0.05
10
s
DC
SINGLE PULSE
R
θ
J A
= See Note 1c
T
A
= 25°C
SINGLE PULSE
R
θ
J A
= See Note 1c
T
A
= 25°C
0.01
0.1
0.2
0.5
1
2
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
30
50
0.01
0.1
0.2
0.5
1
2
5
10
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
30
50
Figure 26. N-Ch Maximum Safe Operating
Area
.
Figure 27. P-Ch Maximum Safe Operating
Area
.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
r(t), NORMALIZED EFFECTIVE
R
θ
JA (t) = r(t) * R
θ
JA
R JA = See Note 1c
θ
t
1
t
2
T
J
- T
A
= P * R
JA
(t)
θ
Duty Cycle, D = t
1
/ t
2
10
100
300
t
1
, TIME (sec)
Figure 28. Transient Thermal Response Curve
.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDS8858H Rev. C