Typical Electrical Characteristics
1.1
DRAIN-SOURCE BREAKDOWN VOLTAGE
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
I
1.05
D
= 250µA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
I
D
= -250µA
BV
DSS
, NORMALIZED
1
0.95
0.9
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
BV
DSS
, NORMALIZED
-25
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
Figure 13. N-Channel Breakdown Voltage
Variation with Temperature.
Figure 14. P-Channel Breakdown Voltage
Variation with Temperature.
2000
1500
1000
2000
1000
CAPACITANCE (pF)
CAPACITANCE (pF)
C iss
500
C iss
500
C oss
C oss
300
200
200
f = 1 MHz
V
GS
= 0V
f = 1 MHz
V
GS
= 0V
C rss
C rss
100
0.1
0.2
V
0.5
DS
1
2
5
10
20
30
, DRAIN TO SOURCE VOLTAGE (V)
100
0.1
0.2
0.5
1
2
5
10
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 15. N-Channel Capacitance
Characteristics.
Figure 16. P-Channel Capacitance
Characteristics.
10
10
I
D
= 4.8A
V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= 5V
-V
GS
, GATE-SOURCE VOLTAGE (V)
10V
I
D
= -4.8A
20V
8
V
DS
= -5V
-20V
6
6
-10V
4
4
2
2
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
Figure 17. N-Channel Gate Charge Characteristics.
Figure 18. P-Channel Gate Charge Characteristics.
NDS8858H Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
