Typical Electrical Characteristics
2
2
V
G S
= 10V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
V
G S
= -10V
R
DS(ON)
, NORMALIZED
1.5
TJ = 125°C
R
DS(on)
, NORMALIZED
1.5
TJ = 125°C
1.25
25°C
1
25°C
1
-55°C
0.75
-55°C
0.5
0.5
0
5
10
15
I
D
, DRAIN CURRENT (A)
20
25
0
-4
I
D
-8
-12
, DRAIN CURRENT (A)
-16
-20
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
Figure 8. P-Channel On-Resistance Variation
with Drain Current and Temperature
.
25
-20
V
DS
= 10V
20
I
D
, DRAIN CURRENT (A)
TJ = -55°C
25°C
125°C
-15
I
D
, DRAIN CURRENT (A)
V
DS
= -10V
T J = -55°C
125°C
25°C
15
-10
10
-5
5
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0
-1
-2
-3
-4
-5
V
GS
, GATE TO SOURCE VOLTAGE (V)
-6
Figure 9. N-Channel Transfer
Characteristics.
Figure 10. P-Channel Transfer
Characteristics.
1.2
GATE-SOURCE THRESHOLD VOLTAGE
GATE-SOURCE THRESHOLD VOLTAGE
1.2
1.1
V
DS
= V
GS
I
D
= 250µA
V
th
, NORMALIZED
1.1
V
DS
= V
G S
I
D
= -250µA
V
th
, NORMALIZED
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDS8858H Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
