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SFF9240 参数 Datasheet PDF下载

SFF9240图片预览
型号: SFF9240
PDF下载: 下载PDF文件 查看货源
内容描述: 先进的功率MOSFET [Advanced Power MOSFET]
分类和应用: 晶体晶体管脉冲局域网
文件页数/大小: 7 页 / 209 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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SFF9240
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Symbol
BV
DSS
∆BV/∆T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller”) Charge
Min. Typ. Max. Units
-200
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.16
--
--
--
--
--
--
5.3
207
81
16
23
54
19
46
9.2
22.9
--
--
-4.0
-100
100
-10
-100
0.5
--
310
120
40
55
115
50
59
--
--
nC
ns
µA
S
pF
V
o
P-CHANNEL
POWER MOSFET
Test Condition
V
GS
=0V,I
D
=-250µA
See Fig 7
V
DS
=-5V,I
D
=-250µA
V
GS
=-30V
V
GS
=30V
V
DS
=-200V
V
DS
=-160V,T
C
=125 C
V
GS
=-10V,I
D
=-3.8A
V
DS
=-40V,I
D
=-3.8A
4
O
4
O
o
V/ C I
D
=-250µA
V
nA
1220 1585
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
V
DD
=-100V,I
D
=-11A,
R
G
=9.1Ω
See Fig 13
4
5
OO
V
DS
=-160V,V
GS
=-10V,
I
D
=-11A
See Fig 6 & Fig 12
4
5
OO
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1
O
4
O
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
180
1.24
-7.6
-30
-5.0
--
--
A
V
ns
µC
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25 C,I
S
=-7.6A,V
GS
=0V
T
J
=25 C,I
F
=-11A
di
F
/dt=100A/µs
4
O
o
o
Notes ;
1
O
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
2
O
L=20mH, I
AS
=-7.6A, V
DD
=-50V, R
G
=27Ω
*
, Starting T
J
=25
oo
C
_
_
_
3
O
I
SD
<
-11A, di/dt
<
450A/µs, V
DD
<
BV
DSS
, Starting T
J
=25 C
_
4
O
Pulse Test : Pulse Width = 250µs, Duty Cycle
<
2%
5
O
Essentially Independent of Operating Temperature