SFF9240
Fig 7. Breakdown Voltage vs. Temperature
12
.
30
.
P-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
11
.
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
25
.
20
.
10
.
15
.
10
.
@Nts:
oe
1 V =-0V
.
GS
1
2 I =-. A
.
D
55
-0
5
-5
2
0
2
5
5
0
7
5
10
0
o
09
.
@Nts:
oe
1 V =0V
.
GS
2 I = - 5
µ
A
.
D
20
-0
5
-5
2
0
2
5
5
0
7
5
10
0
o
05
.
08
.
-5
7
15
2
10
5
15
7
00
.
-5
7
15
2
10
5
15
7
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
-I
D
, Drain Current [A]
1
2
0
Oeaini Ti Ae
prto n hs ra
i L m t d b R
DS(on)
s iie y
Fig 10. Max. Drain Current vs. Case Temperature
8
-I
D
, Drain Current [A]
1
1
0
1m
s
1 m
0 s
@Nts:
oe
1 T = 2
o
C
.
C
5
2 T = 1 0
o
C
.
J
5
3 Snl Ple
. ige us
1
-1 0
0
1
0
D
C
01m
. s
6
4
1
0
0
2
1
1
0
1
2
0
0
2
5
5
0
7
5
10
0
15
2
10
5
-V
DS
, Drain-Source Voltage [V]
T
c
, Case Temperature [
o
C]
Fig 11. Thermal Response
Thermal Response
10
0
D=0.5
0.2
0.1
@ Notes :
1. Z
θ
J C
(t)=2.08
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
θ
J C
(t)
P
.
DM
t
1.
t
2.
10
- 1
0.05
0.02
0.01
single pulse
Z
JC
(t) ,
θ
10
- 2 - 5
10
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
t
1
, Square Wave Pulse Duration
[sec]
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
