P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V
GS
Top :
-1 V
5
-1 V
0
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
SFF9240
Fig 2. Transfer Characteristics
-I
D
, Drain Current [A]
-I
D
, Drain Current [A]
1
1
0
1
1
0
1 0
o
C
5
1
0
0
2
o
C
5
@Nts:
oe
1 V =0V
.
GS
2 V =-0V
.
DS
4
3 2 0
µ
s P l e T s
. 5
us et
6
8
1
0
1
0
0
@Nts:
oe
1 2 0
µ
s P l e T s
. 5
us et
2 T = 2
o
C
.
C
5
1
-1 -1
0
1
0
1
0
0
1
1
0
- 5
o
C
5
1
-1
0
2
4
-V
DS
, Drain-Source Voltage [V]
-V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
15
.0
Fig 4. Source-Drain Diode Forward Voltage
-I
DR
, Reverse Drain Current [A]
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
12
.5
1
1
0
10
.0
V =-0V
1
GS
07
.5
1
0
0
05
.0
1 0
o
C
5
2
o
C
5
@Nts:
oe
1 V =0V
.
GS
2 2 0
µ
s P l e T s
. 5
us et
20
.
25
.
30
.
35
.
40
.
45
.
50
.
02
.5
V =-0V
2
GS
00
.0
0
7
1
4
2
1
2
8
@ N t : T = 2
o
C
oe
J
5
3
5
4
2
1
-1
0
05
.
10
.
15
.
-I
D
, Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
20
50
C =C +C (C =sotd)
iss gs gd
ds
h r e
C =C +C
oss ds gd
C =C
rss gd
C
iss
10
50
C
oss
10
00
C
rss
50
0
@Nts:
oe
1 V =0V
.
GS
2 f=1Mz
.
H
Fig 6. Gate Charge vs. Gate-Source Voltage
-V
GS
, Gate-Source Voltage [V]
20
00
1
0
Capacitance [pF]
V =-0V
4
DS
V =-0 V
10
DS
V =-6 V
10
DS
5
@Nts:I =1 A
oe
D
-1
0
0
1
0
2
0
3
0
4
0
5
0
0
0
1
0
1
1
0
-V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
