1MBI50U4F-120L-50 参数 Datasheet PDF下载

1MBI50U4F-120L-50

Electrical characteristics (at Tj= 25°C unless otherwise specified)

Items

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Symbols

I

CES

I

GES

V

GE (th)

V

CE (sat)

(terminal)

V

CE (sat)

(chip)

Cies

ton

tr

tr(i)

toff

tf

V

F

(terminal)

V

F

(chip)

IR

V

F

(terminal)

V

F

(chip)

trr

R lead

Conditions

V

GE

= 0V, V

CE

= 1200V

V

CE

= 0V, V

GE

= ±20V

V

CE

= 20V, I

C

= 50mA

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

Tj=25°C

Tj=125°C

V

GE

= 15V

I

C

= 50A

Tj=25°C

Tj=125°C

V

GE

= 0V, V

CE

= 10V, f = 1MHz

V

CC

= 600V, I

C

= 50A

V

GE

= ±15V, R

G

= 22Ω

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Forward on voltage

Reverse Current

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip(*4)

Note *4: Biggest internal terminal resistance among arm.

V

GE

= 0V

I

F

= 25A

V

CE

= 1200V

V

GE

= 0V

I

F

= 75A

I

F

= 75A

Characteristics

min.

typ.

max.

-

-

1.0

-

-

200

4.5

6.5

8.5

-

2.00

2.15

-

2.20

-

-

1.90

2.05

-

2.10

-

-

6

-

-

0.32

1.20

-

0.10

0.60

-

0.03

-

-

0.41

1.00

-

0.07

0.30

-

1.65

2.00

-

1.75

-

-

1.60

1.85

-

1.70

-

-

-

1.0

-

1.75

1.90

-

1.90

-

-

1.60

1.75

-

1.75

-

-

-

0.35

-

1.39

-

Units

mA

nA

V

V

nF

µs

V

mA

V

µs

mΩ

Thermal resistance characteristics

Items

Thermal resistance (1device)

Contact thermal resistance

Symbols

Rth(j-c)

Rth(c-f)

Conditions

IGBT

Inverse Diode

FWD

with Thermal Compound (*5)

Characteristics

min.

typ.

max.

-

-

0.45

-

-

1.19

-

-

0.48

-

0.05

-

Units

°C/W

Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.

2