1MBI50U4F-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25
o
C / chip
125
V
GE
=20V 15V
Collector current : Ic [ A ]
100
75
50
25
8V
0
0
1
2
3
4
Collector-Emitter voltage : V
CE
[ V ]
5
0
0
10V
12V
Collector current : Ic [A ]
125
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IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125
o
C / chip
V
GE
=20V
100
75
15V
12V
50
25
10V
8V
1
2
3
4
Collector-Emitter voltage : V
CE
[ V ]
5
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25
o
C / chip
10
125
Tj=25
o
C
Tj=125
o
C
Collector-Emitter voltage : V
CE
[ V ]
Collector current : Ic [ A ]
100
8
75
6
50
4
Ic=200A
Ic=100A
Ic=50A
25
2
0
0
1
2
3
4
Collector-Emitter voltage : V
CE
[ V ]
5
0
5
10
15
20
Gate-Emitter voltage : V
GE
[ V ]
25
Capacitance vs. Collector-Emitter voltage (typ.)
V
GE
=0V, f=1MHz, Tj=25 C
Capacitance : Cies, Coes, Cres [ nF ]
100.0
Collector- Emitter voltage : V
CE
[ 200V/div ]
Gate-Emitter voltage : V
GE
[ 5V/div ]
o
Dynamic Gate charge (typ.)
Vcc=600V, Ic=50A, Tj=25
o
C
V
GE
V
CE
10.0
Cies
1.0
Cres
Coes
0.1
0
10
20
Collector-Emitter voltage : V
CE
[ V ]
30
0
0
100
200
Gate charge : Qg [ nC ]
300
3
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