IRFBC40, IRFBC42
Electrical Specifications
PARAMETER
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
L
D
TEST CONDITIONS
Measured From the Drain Modified MOSFET
Lead, 6mm (0.25in) From Symbol Showing the
Package to Center of Die Internal Devices
Inductances
Measured From the
D
Source Lead, 6mm
L
D
(0.25in) From Header to
Source Bonding Pad
G
L
S
S
MIN
-
TYP
4.5
MAX
-
UNITS
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Typical Socket Mount
-
-
-
-
1.0
80
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
6.2
25
UNITS
A
A
S
Diode Source to Drain Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 6.2A, V
GS
= 0V, (Figure 8)
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/µs
-
200
1.8
-
450
3.8
1.5
940
8.0
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 16mH, R
G
= 25Ω, peak I
AS
= 6.8A. (Figures 15, 16).
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
10
0.8
0.6
0.4
0.2
0
I
D,
DRAIN CURRENT (A)
8
6
IRFBC40
4
IRFBC42
2
0
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
T
C,
CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
5-3
HARRIS [ HARRIS CORPORATION ]
