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IRFBC40 参数 Datasheet PDF下载

IRFBC40图片预览
型号: IRFBC40
PDF下载: 下载PDF文件 查看货源
内容描述: 6.2A和5.4A , 600V , 1.2和1.6 Ohm的N通道功率MOSFET [6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs]
分类和应用:
文件页数/大小: 7 页 / 70 K
品牌: HARRIS [ HARRIS CORPORATION ]
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IRFBC40, IRFBC42
Typical Performance Curves
Unless Otherwise Specified
(Continued)
Z
θJC
, NORMALIZED TRANSIENT
THERMAL IMPEDANCE (
o
C/W)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.02
0.01
10
-2
SINGLE PULSE
P
DM
t
1
t
2
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-4
0.1
10
-3
10
-2
t
1
, RECTANGULAR PULSE DURATION (s)
1
10
10
-3
10
-5
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
2
IRFBC40
I
D
, DRAIN CURRENT (A)
IRFBC42
10 IRFBC40
IRFBC42
10
OPERATION IN THIS REGION
IS LIMITED BY r
DS(ON)
I
D
, DRAIN CURRENT (A)
10µs
100µs
8
V
GS
= 10V
V
GS
= 6.0V
6
V
GS
= 5.0V
4
V
GS
= 5.5V
80µs PULSE TEST
1ms
1
10ms
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
2
V
GS
= 4.5V
V
GS
= 4.0V
DC
10
3
0
0
0.1
1
10
2
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
60
120
180
240
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
300
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
10
80µs PULSE TEST
8
V
GS
=10V
10
V
GS
= 6.0V
V
GS
= 5.5V
V
DS
100V
80µs PULSE TEST
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
1
6
V
GS
= 5.0V
4
T
J
= 150
o
C
0.1
T
J
= 25
o
C
2
V
GS
= 4.5V
V
GS
= 4.0V
0
0
3
6
9
12
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
15
10
-2
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
5-4