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IRFBC40 参数 Datasheet PDF下载

IRFBC40图片预览
型号: IRFBC40
PDF下载: 下载PDF文件 查看货源
内容描述: 6.2A和5.4A , 600V , 1.2和1.6 Ohm的N通道功率MOSFET [6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs]
分类和应用:
文件页数/大小: 7 页 / 70 K
品牌: HARRIS [ HARRIS CORPORATION ]
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IRFBC40, IRFBC42
Typical Performance Curves
10
2
I
SD
, SOURCE TO DRAIN CURRENT (A)
DRAIN TO SOURCE ON RESISTANCE
Unless Otherwise Specified
(Continued)
5.0
80µs PULSE TEST
4.0
10
T
J
= 150
o
C
T
J
= 25
o
C
1
3.0
V
GS
= 10V
2.0
V
GS
= 20V
1.0
0.1
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1.5
0
6
12
18
I
D,
DRAIN CURRENT (A)
24
30
FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 3.4A
V
GS
= 10V
2.4
1.25
I
D
= 250µA
1.15
1.8
1.05
1.2
0.95
0.6
0.85
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
0.75
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
g
fs
, TRANSCONDUCTANCE (S)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
10
V
DS
100V
80µs PULSE TEST
T
J
= 25
o
C
2400
C, CAPACITANCE (pF)
8
1800
C
ISS
6
T
J
= 150
o
C
1200
C
OSS
600
C
RSS
0
0
2
10
20
50
5
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
10
2
4
2
0
0
2
4
6
I
D,
DRAIN CURRENT (A)
8
10
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT
5-5