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IDT7134SA35J 参数 Datasheet PDF下载

IDT7134SA35J图片预览
型号: IDT7134SA35J
PDF下载: 下载PDF文件 查看货源
内容描述: HIGH -SPEED 4K ×8双端口静态RAM [HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM]
分类和应用:
文件页数/大小: 9 页 / 113 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7134SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE
(1, 3)
t
ACE
CE
t
AOE
(4)
t
HZ
(2)
OE
t
LZ
(1)
DATA
OUT
t
LZ
(1)
I
CC
CURRENT
I
SB
t
PU
50%
t
PD
50%
2720 drw 09
t
HZ
(2)
VALID DATA
(4)
NOTES:
1. Timing depends on which signal is asserted last,
OE
or
CE
.
2. Timing depends on which signal is de-asserted first,
OE
or
CE
.
3. R/
W
= V
IH
.
4. Start of valid data depends on which timing becomes effective , t
AOE
, t
ACE
or t
AA
5. t
AA
for RAM Address Access and t
SAA
for Semaphore Address Access.
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(6)
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
t
WDD
t
DDD
NOTES:
Parameter
Write Cycle Time
Chip Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write RecoveryTime
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(3)
Write Enabled to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 3)
Write Pulse to Data Delay
(4)
Write Data Valid to Read Data Delay
(4, 7)
7134X20
(5)
Min.
Max.
20
15
15
0
15
0
15
0
3
15
15
40
30
7134X25
Min.
Max.
25
20
20
0
20
0
15
0
3
15
15
50
30
7134X35
Min.
Max.
35
30
30
0
25
0
20
3
3
20
20
60
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2720 tbl 10
1. Transition is measured
±500mV
from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
4. Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveform of Write with Port-to-Port Read”.
5. (Commercial only), 0°C to +70°C temperature range .
6. “X” in part number indicates power rating (SA or LA).
7. t
DDD
= 35ns for military temperature range.
6.04
6