Data Sheet BTS650P
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Inverse Load Current Operation
On-state resistance
(Pins 1, 2, 6, 7 to pin 4)
V
bIN
= 12 V,
I
L
= - 20 A
T
j
= 25 °C:
R
ON(inv)
see diagram on page 10
T
j
= 150 °C:
Nominal inverse load current
(Pins 1, 2, 6, 7 to Tab)
I
L(inv)
V
ON
= -0.5 V,
T
c = 85 °C
11
-V
ON
Drain-source diode voltage
(V
out
> V
bb
)
I
L
= - 20 A,
I
IN
= 0,
T
j
= +150°C
Operating Parameters
Operating voltage (V
IN
= 0V)
13
)
14
Under voltage shutdown
)
Under voltage start of charge pump
see diagram page
15
Over voltage protection
15
)
T
j
=-40°C:
I
bb
= 15 mA
T
j
= 25...+150°C:
Standby current
T
j
=-40...+25°C:
I
IN
= 0
T
j
= 150°C:
V
bb(on)
V
bIN(u)
V
bIN(ucp)
V
Z,IN
I
bb(off)
--
55
--
4.4
7.9
70
0.6
6.0
10.5
--
--
mΩ
A
V
5.0
1.5
3.0
60
62
--
--
--
3.0
4.5
--
66
15
25
34
4.5
6.0
--
--
25
50
V
V
V
V
µA
) If the device is turned on before a V -decrease, the operating voltage range is extended down to
V
bIN(u)
.
bb
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14
)
V
bIN
= V
bb
- V
IN
see diagram on page 7. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5 V
(typ.) the charge pump is not active and
V
OUT
≈V
bb
- 3 V.
15
)
See also
V
ON(CL)
in circuit diagram on page 9.
13
Infineon Technologies AG
Page 4
2003-Oct-01
INFINEON [ INFINEON TECHNOLOGIES AG ]
