Data Sheet BTS650P
Current sense status output
V bb
Input circuit (ESD protection)
V
bb
R
bb
ZD
V
Z,IS
V
V bIN
ZD
R bb
Z,IN
IS
IN
I
IN
I
IS
R
IS
V
IS
V IN
When the device is switched off (I
IN
= 0) the voltage
between IN and GND reaches almost V
bb
. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
V
Z,IN
= 66 V (typ).
V
Z,IS
= 66 V (typ.),
R
IS
= 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel).
I
S
=
I
L
/k
ilis
can be
driven only by the internal circuit as long as
V
out
-
V
IS
>
5 V. If you want measure load currents up to
I
L(M)
, R
IS
V
bb
- 5 V
.
should be less than
I
L(M)
/
K
ilis
Note: For large values of
R
IS
the voltage
V
IS
can reach
almost V
bb
. See also over voltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Short circuit detection
Fault Condition:
V
ON
> V
ON(SC)
(6 V typ.) and t> t
d(SC)
(80 ...350 µs).
+ Vbb
Inductive and over voltage output clamp
+ V
bb
V
Z1
V
ON
V
ON
V
ZG
OUT
OUT
Logic
unit
Short circuit
detection
D
S
IS
PROFET
V
OUT
V
ON
is clamped to V
ON(Cl)
= 42 V typ. At inductive load
switch-off without D
S
, V
OUT
is clamped to V
OUT(CL)
=
-19 V typ. via V
ZG
. With D
S
, V
OUT
is clamped to V
bb
-
V
ON(CL)
via V
Z1
. Using D
S
gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Infineon Technologies AG
Page 8
2003-Oct-01
INFINEON [ INFINEON TECHNOLOGIES AG ]
