Data Sheet BTS650P
Truth Table
Input
current
level
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over
temperature
Short circuit to
V
bb
Open load
Negative output
voltage clamp
Inverse load
current
L
H
H
H
L
H
L
H
L
H
L
H
L
L
H
Output
level
L
H
H
H
L
L
L
L
H
H
23
Z
)
H
L
H
H
Current
Sense
IIS
0
nominal
I
IS, lim
0
0
0
0
0
0
22
<nominal
)
0
0
0
0
0
Remark
=I
L
/ k
ilis
, up to I
IS
=I
IS,lim
up to V
ON
=V
ON(Fold back)
I
IS
no longer proportional to I
L
V
ON
> V
ON(Fold back)
if V
ON
>V
ON(SC)
, shutdown will occur
L = "Low" Level; H = "High" Level
Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
I bb
V
bIN
4
Vbb
IL
V
bb
R
IN
V
IN
R
ON
measurement layout
V
ON
OUT
l
≤
5.5mm
3
IN
PROFET
IS
5
1,2,6,7
I
IN
V
bIS
V
IS
I
IS
D
S
R
IS
Vbb force
V
OUT
Out Force Sense
contacts
contacts
(both out
pins parallel)
Typical R
ON
for SMD version is about 0.2 mΩ
less
than straight leads due to l
≈
2 mm
Two or more devices can easily be connected in
parallel to increase load current capability.
) Low ohmic short to
V
bb
may reduce the output current
I
L
and can thus be detected via the sense current
I
IS
.
) Power Transistor "OFF", potential defined by external impedance.
22
23
Infineon Technologies AG
Page 7
2003-Oct-01
INFINEON [ INFINEON TECHNOLOGIES AG ]
