IRF620
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF620
200
200
5.0
3.0
20
±20
40
0.32
85
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured from the Contact Modified MOSFET
Screw on Tab to Center of Symbol Showing the
Die
Internal Devices
Inductances
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
D
L
D
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA, (Figure 10)
V
DS
= V
GS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±20V
V
GS
= 10V, I
D
= 2.5A, (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 2.5A (Figure 12)
V
DD
= 100V, I
D
≈
5.0A, R
G
= 9.1Ω, R
L
= 20Ω,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
V
GS
= 10V, I
D
= 5.0A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
MIN
200
2.0
-
-
5.0
-
-
1.3
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.8
2.5
20
30
50
30
11
5.0
6.0
450
150
40
3.5
MAX
-
4.0
25
250
-
±100
1.2
-
40
60
100
60
15
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
-
4.5
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
-
G
L
S
S
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
3.12
62.5
o
C/W
o
C/W
4-197
INTERSIL [ INTERSIL CORPORATION ]
