IRF620
Typical Performance Curves
1.25
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
1.15
C, CAPACITANCE (pF)
800
Unless Otherwise Specified
(Continued)
1000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.05
600
C
ISS
400
C
OSS
200
C
RSS
0.95
0.85
0.75
-40
0
40
80
120
160
0
0
10
20
30
40
50
T
J
, JUNCTION TEMPERATURE (
o
C)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
g
fs
, TRANSCONDUCTANCE (S)
I
SD
, SOURCE TO DRAIN CURRENT (A)
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
>
I
D(ON)
x r
DS(ON) MAX
T
J
= -55
o
C
T
J
= 25
o
C
PULSE DURATION = 80µs
100 DUTY CYCLE = 0.5% MAX
T
J
= 25
o
C
T
J
= 150
o
C
3
T
J
= 125
o
C
2
10
1
T
J
= 150
o
C
T
J
= 25
o
C
0
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
1
0
1
2
3
4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
D
= 6A
V
DS
= 40V
20
V
DS
= 100V
10
V
DS
= 160V
5
V
GS
, GATE TO SOURCE (V)
15
0
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-200
INTERSIL [ INTERSIL CORPORATION ]
